Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs

Paula Diaz Reigosa

Research output: Book/ReportPh.D. thesisResearch

593 Downloads (Pure)
Original languageEnglish
PublisherAalborg Universitetsforlag
Number of pages160
ISBN (Electronic)978-87-7112-996-0
DOIs
Publication statusPublished - 2017
SeriesPh.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet
ISSN2446-1636

Bibliographical note

PhD supervisor:
Prof. Francesco Iannuzzo, Aalborg University, Denmark

Assistant PhD supervisor:
Prof. Frede Blaabjerg, Aalborg University, Denmark

Keywords

  • IGBT, short circuit, parametric oscillations, TCAD, power semiconductor devices, SiC MOSFETs, failure mechanisms, robustness, reliability, short circuit testing,

Cite this

Reigosa, P. D. (2017). Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. Aalborg Universitetsforlag. Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet https://doi.org/10.5278/vbn.phd.eng.00033
Reigosa, Paula Diaz. / Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. Aalborg Universitetsforlag, 2017. 160 p. (Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet).
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author = "Reigosa, {Paula Diaz}",
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Reigosa, PD 2017, Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet, Aalborg Universitetsforlag. https://doi.org/10.5278/vbn.phd.eng.00033

Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. / Reigosa, Paula Diaz.

Aalborg Universitetsforlag, 2017. 160 p. (Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet).

Research output: Book/ReportPh.D. thesisResearch

TY - BOOK

T1 - Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs

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PY - 2017

Y1 - 2017

KW - IGBT, short circuit, parametric oscillations, TCAD, power semiconductor devices, SiC MOSFETs, failure mechanisms, robustness, reliability, short circuit testing,

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DO - 10.5278/vbn.phd.eng.00033

M3 - Ph.D. thesis

T3 - Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet

BT - Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs

PB - Aalborg Universitetsforlag

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Reigosa PD. Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs. Aalborg Universitetsforlag, 2017. 160 p. (Ph.d.-serien for Det Ingeniør- og Naturvidenskabelige Fakultet, Aalborg Universitet). https://doi.org/10.5278/vbn.phd.eng.00033