Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs

Paula Diaz Reigosa

doi:10.5278/vbn.phd.eng.00033

Short-Circuit Instabilities in Silicon IGBTs and Silicon Carbide Power MOSFETs

Paula Diaz Reigosa

Research output: PhD thesis

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Original language	English
Supervisors	Iannuzzo, Francesco, Principal supervisor Blaabjerg, Frede, Co-supervisor
Publisher	Aalborg Universitetsforlag
Electronic ISBNs	978-87-7112-996-0
DOIs	https://doi.org/10.5278/vbn.phd.eng.00033
Publication status	Published - 2017

Bibliographical note

PhD supervisor:
Prof. Francesco Iannuzzo, Aalborg University, Denmark

Assistant PhD supervisor:
Prof. Frede Blaabjerg, Aalborg University, Denmark

Keywords

IGBT, short circuit, parametric oscillations, TCAD, power semiconductor devices, SiC MOSFETs, failure mechanisms, robustness, reliability, short circuit testing,

Access to Document

10.5278/vbn.phd.eng.00033

PHD_Paula_Diaz_Reigosa_E-pdfFinal published version, 47.2 MB

AUB Link

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Cite this

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