Short Circuit Protection of Silicon Carbide MOSFETs: Challenges, Methods, and Prospects

With the fabulous growth of the renewable energy industry, silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (mosfets) are increasingly finding applications in various scenarios. To ensure the safe operation of SiC mosfets, there is a pressing need for fast and reliable short-circuit protection methods. This article aims to give a detail overview of the existing short-circuit protection technologies for SiC mosfets regarding their merits and limitations. First, the challenges associated with short-circuit protection are comprehensively analyzed. Subsequently, thorough comparisons of state-of-the-art short-circuit detection methods and soft turn-off strategies are conducted, respectively. Finally, this work outlines the prospects of short-circuit protection technologies in the aspects of deficiencies and optimization of short-circuit protection in multichip power module with paralleled SiC mosfets.