Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module

Claudiu Ionita , Muhammad Nawaz , Kalle Ilves , Francesco Iannuzzo

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

11 Citations (Scopus)

Abstract

While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.
Original languageEnglish
Title of host publicationProceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)
PublisherIEEE Press
Publication dateOct 2017
ISBN (Electronic)978-1-5090-2998-3
DOIs
Publication statusPublished - Oct 2017
Event2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, United States
Duration: 1 Oct 20175 Oct 2017

Conference

Conference2017 IEEE Energy Conversion Congress and Exposition (ECCE)
CountryUnited States
CityCincinnati, Ohio
Period01/10/201705/10/2017

Fingerprint

Short circuit currents
Electric potential
Leakage currents
Resistors
Power MOSFET
Networks (circuits)

Keywords

  • Power Modules
  • SiC MOSFET
  • Short-circuit
  • Safe Operating Area
  • Wide Bandgap

Cite this

Ionita , C., Nawaz , M., Ilves , K., & Iannuzzo, F. (2017). Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. In Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE) IEEE Press. https://doi.org/10.1109/ECCE.2017.8096399
Ionita , Claudiu ; Nawaz , Muhammad ; Ilves , Kalle ; Iannuzzo, Francesco. / Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017.
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abstract = "While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.",
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Ionita , C, Nawaz , M, Ilves , K & Iannuzzo, F 2017, Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. in Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017 IEEE Energy Conversion Congress and Exposition (ECCE), Cincinnati, Ohio, United States, 01/10/2017. https://doi.org/10.1109/ECCE.2017.8096399

Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. / Ionita , Claudiu; Nawaz , Muhammad; Ilves , Kalle; Iannuzzo, Francesco.

Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press, 2017.

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

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AU - Ilves , Kalle

AU - Iannuzzo, Francesco

PY - 2017/10

Y1 - 2017/10

N2 - While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.

AB - While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters on the peak current and short-circuit energy. The peak current of the investigated module can be as high as 2.5 kA for VGS=20 V and does not depend significantly on the gate resistors used in this research. A safe operating area (SOA) is mapped at different VGS and pulse durations and for VDS=800 V, which is typically encountered in applications for devices of these ratings. Five modules were failed in total, with a critical short-circuit energy, Ecr ranging from 7.3 J to 9.7 J. The failure mechanism is generally the thermal runaway. Prior to failure, a decrease in VGS can be observed which is an indication of an increased gate-source leakage current. The results obtained in this experimental work show a good withstand capability of the modules to SC events. The experimental data obtained during this work gives an insight into the device behavior and limitations during SC events and can be used by gate driver designers to develop protection circuits.

KW - Power Modules

KW - SiC MOSFET

KW - Short-circuit

KW - Safe Operating Area

KW - Wide Bandgap

U2 - 10.1109/ECCE.2017.8096399

DO - 10.1109/ECCE.2017.8096399

M3 - Article in proceeding

BT - Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE)

PB - IEEE Press

ER -

Ionita C, Nawaz M, Ilves K, Iannuzzo F. Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module. In Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE Press. 2017 https://doi.org/10.1109/ECCE.2017.8096399