Simplified Multi-time Scale Thermal Model Considering Thermal Coupling in IGBT Modules

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6 Citations (Scopus)
87 Downloads (Pure)

Abstract

In the reliability evaluation of power electronic systems, one of the challenges is to model the thermal profiles across multiple time scales, i.e., from switching cycles at nano- or micro-seconds to annual or even longer-time mission profiles. Without consideration of the dissimilarity of thermal behaviors under different time scales, a single thermal model usually leads to either considerable modeling errors or heavy computational burden. Based on the frequency response of thermal impedances, this paper proposes a novel and simplified thermal model to analyze mission profiles with multiple time scales. It enables a computational-efficient thermal stress analysis for power semiconductors, including the thermal coupling in device packages. The theoretical results are verified by experimental testing.
Original languageEnglish
Title of host publicationProceedings of 2019 IEEE Applied Power Electronics Conference and Exposition (APEC)
Number of pages6
PublisherIEEE Press
Publication date24 May 2019
Pages319-324
Article number8721898
ISBN (Electronic)9781538683309
DOIs
Publication statusPublished - 24 May 2019
Event34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019 - Anaheim, United States
Duration: 17 Mar 201921 Mar 2019

Conference

Conference34th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2019
Country/TerritoryUnited States
CityAnaheim
Period17/03/201921/03/2019
SponsorIEEE Industry Applications Society (IAS), IEEE Power Electronics Society (PELS), Power Sources Manufacturers Association (PSMA)
SeriesI E E E Applied Power Electronics Conference and Exposition. Conference Proceedings
ISSN1048-2334

Keywords

  • Power semiconductor
  • Reliability
  • Thermal coupling
  • Thermal modeling

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