Single-electron tunneling in InP nanowires

S. De Franceschi; J. A. Van Dam; E. P.A.M. Bakkers; L. F. Feiner; L. Gurevich; L. P. Kouwenhoven

doi:10.1063/1.1590426

Single-electron tunneling in InP nanowires

S. De Franceschi^*, J. A. Van Dam, E. P.A.M. Bakkers, L. F. Feiner, L. Gurevich, L. P. Kouwenhoven

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

143 Citations (Scopus)

Abstract

A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ∼10 kω, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ∼1 meV.

Original language	English
Journal	Applied Physics Letters
Volume	83
Issue number	2
Pages (from-to)	344-346
Number of pages	3
ISSN	0003-6951
DOIs	https://doi.org/10.1063/1.1590426
Publication status	Published - 14 Jul 2003

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@article{f234fcf5b09b4955929160528edbc2c6,

title = "Single-electron tunneling in InP nanowires",

abstract = "A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ∼10 kω, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ∼1 meV.",

author = "{De Franceschi}, S. and {Van Dam}, {J. A.} and Bakkers, {E. P.A.M.} and Feiner, {L. F.} and L. Gurevich and Kouwenhoven, {L. P.}",

year = "2003",

month = jul,

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doi = "10.1063/1.1590426",

language = "English",

volume = "83",

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journal = "Applied Physics Letters",

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AU - De Franceschi, S.

AU - Van Dam, J. A.

AU - Bakkers, E. P.A.M.

AU - Feiner, L. F.

AU - Gurevich, L.

AU - Kouwenhoven, L. P.

PY - 2003/7/14

Y1 - 2003/7/14

N2 - A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ∼10 kω, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ∼1 meV.

AB - A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ∼10 kω, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ∼1 meV.

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U2 - 10.1063/1.1590426

DO - 10.1063/1.1590426

M3 - Journal article

AN - SCOPUS:0042769310

SN - 0003-6951

VL - 83

SP - 344

EP - 346

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

ER -

Single-electron tunneling in InP nanowires

Abstract

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