Size-effects in photoemission and optical second harmonic generation spectroscopy of Ge nano-dots on Si(111)

Jens Rafaelsen, Kjeld Pedersen, Zheshen Li

    Research output: Contribution to journalJournal articleResearchpeer-review

    1 Citation (Scopus)
    Original languageEnglish
    JournalJournal of Applied Physics
    Volume114
    Issue number4
    Number of pages8
    ISSN0021-8979
    DOIs
    Publication statusPublished - 23 Jul 2013

    Cite this

    @article{c6a586bccaf14308b2e10355a3110034,
    title = "Size-effects in photoemission and optical second harmonic generation spectroscopy of Ge nano-dots on Si(111)",
    author = "Jens Rafaelsen and Kjeld Pedersen and Zheshen Li",
    year = "2013",
    month = "7",
    day = "23",
    doi = "10.1063/1.4816258",
    language = "English",
    volume = "114",
    journal = "Journal of Applied Physics",
    issn = "0021-8979",
    publisher = "American Institute of Physics",
    number = "4",

    }

    Size-effects in photoemission and optical second harmonic generation spectroscopy of Ge nano-dots on Si(111). / Rafaelsen, Jens; Pedersen, Kjeld; Li, Zheshen.

    In: Journal of Applied Physics, Vol. 114, No. 4, 23.07.2013.

    Research output: Contribution to journalJournal articleResearchpeer-review

    TY - JOUR

    T1 - Size-effects in photoemission and optical second harmonic generation spectroscopy of Ge nano-dots on Si(111)

    AU - Rafaelsen, Jens

    AU - Pedersen, Kjeld

    AU - Li, Zheshen

    PY - 2013/7/23

    Y1 - 2013/7/23

    U2 - 10.1063/1.4816258

    DO - 10.1063/1.4816258

    M3 - Journal article

    VL - 114

    JO - Journal of Applied Physics

    JF - Journal of Applied Physics

    SN - 0021-8979

    IS - 4

    ER -