Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy

Dalin Zhang; Zhi Liu; Dongliang Zhang; Xu Zhang; Junying Zhang; Jun Zheng; Yuhua Zuo; Chunlai Xue; Chuanbo Li; Shunri Oda; Buwen Cheng; Qiming Wang

doi:10.1021/acs.jpcc.5b03735

Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy

Dalin Zhang, Zhi Liu, Dongliang Zhang, Xu Zhang, Junying Zhang, Jun Zheng, Yuhua Zuo, Chunlai Xue, Chuanbo Li^*, Shunri Oda, Buwen Cheng, Qiming Wang

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

13 Citations (Scopus)

Abstract

A new strategy to grow defect-free GeSn alloy matrixes (GSMs) on Si(111) substrates with the assistance of Sn is discussed. It is found that the compressive strain induced by a large lattice mismatch (>4.2%) in the GeSn-Si system is relaxed by introducing (111)-parallel planar dislocations at the GeSn/Si interface, while the upper part of the GSMs remained defect-free. The incorporation of Sn into Ge is investigated by both Raman spectra and selected area electron diffraction patterns. The Sn concentration varies approximately linearly against the epitaxial temperature and reaches 5.26% at 300°C, which is considerably larger than the equilibrium value. The growth mechanism and morphological features are investigated systematically. The proposed method provides an easy technique to grow high-quality GeSn materials for Si-based photonics and microelectronics applications.

Original language	English
Journal	Journal of Physical Chemistry C
Volume	119
Issue number	31
Pages (from-to)	17842-17847
Number of pages	6
ISSN	1932-7447
DOIs	https://doi.org/10.1021/acs.jpcc.5b03735
Publication status	Published - 6 Aug 2015
Externally published	Yes

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© 2015 American Chemical Society.

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@article{791c3c9edbe142d3af940d4142ce3080,

title = "Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy",

abstract = "A new strategy to grow defect-free GeSn alloy matrixes (GSMs) on Si(111) substrates with the assistance of Sn is discussed. It is found that the compressive strain induced by a large lattice mismatch (>4.2%) in the GeSn-Si system is relaxed by introducing (111)-parallel planar dislocations at the GeSn/Si interface, while the upper part of the GSMs remained defect-free. The incorporation of Sn into Ge is investigated by both Raman spectra and selected area electron diffraction patterns. The Sn concentration varies approximately linearly against the epitaxial temperature and reaches 5.26% at 300°C, which is considerably larger than the equilibrium value. The growth mechanism and morphological features are investigated systematically. The proposed method provides an easy technique to grow high-quality GeSn materials for Si-based photonics and microelectronics applications.",

author = "Dalin Zhang and Zhi Liu and Dongliang Zhang and Xu Zhang and Junying Zhang and Jun Zheng and Yuhua Zuo and Chunlai Xue and Chuanbo Li and Shunri Oda and Buwen Cheng and Qiming Wang",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = aug,

day = "6",

doi = "10.1021/acs.jpcc.5b03735",

language = "English",

volume = "119",

pages = "17842--17847",

journal = "Journal of Physical Chemistry C",

issn = "1932-7447",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy

AU - Zhang, Dalin

AU - Liu, Zhi

AU - Zhang, Dongliang

AU - Zhang, Xu

AU - Zhang, Junying

AU - Zheng, Jun

AU - Zuo, Yuhua

AU - Xue, Chunlai

AU - Li, Chuanbo

AU - Oda, Shunri

AU - Cheng, Buwen

AU - Wang, Qiming

PY - 2015/8/6

Y1 - 2015/8/6

N2 - A new strategy to grow defect-free GeSn alloy matrixes (GSMs) on Si(111) substrates with the assistance of Sn is discussed. It is found that the compressive strain induced by a large lattice mismatch (>4.2%) in the GeSn-Si system is relaxed by introducing (111)-parallel planar dislocations at the GeSn/Si interface, while the upper part of the GSMs remained defect-free. The incorporation of Sn into Ge is investigated by both Raman spectra and selected area electron diffraction patterns. The Sn concentration varies approximately linearly against the epitaxial temperature and reaches 5.26% at 300°C, which is considerably larger than the equilibrium value. The growth mechanism and morphological features are investigated systematically. The proposed method provides an easy technique to grow high-quality GeSn materials for Si-based photonics and microelectronics applications.

AB - A new strategy to grow defect-free GeSn alloy matrixes (GSMs) on Si(111) substrates with the assistance of Sn is discussed. It is found that the compressive strain induced by a large lattice mismatch (>4.2%) in the GeSn-Si system is relaxed by introducing (111)-parallel planar dislocations at the GeSn/Si interface, while the upper part of the GSMs remained defect-free. The incorporation of Sn into Ge is investigated by both Raman spectra and selected area electron diffraction patterns. The Sn concentration varies approximately linearly against the epitaxial temperature and reaches 5.26% at 300°C, which is considerably larger than the equilibrium value. The growth mechanism and morphological features are investigated systematically. The proposed method provides an easy technique to grow high-quality GeSn materials for Si-based photonics and microelectronics applications.

UR - http://www.scopus.com/inward/record.url?scp=84938718877&partnerID=8YFLogxK

U2 - 10.1021/acs.jpcc.5b03735

DO - 10.1021/acs.jpcc.5b03735

M3 - Journal article

AN - SCOPUS:84938718877

SN - 1932-7447

VL - 119

SP - 17842

EP - 17847

JO - Journal of Physical Chemistry C

JF - Journal of Physical Chemistry C

IS - 31

ER -

Sn-Guided Defect-Free GeSn Lateral Growth on Si by Molecular Beam Epitaxy

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