Statistical Method of Estimating Semiconductor Switching Transition Time enabling Condition Monitoring of Megawatt Converters

Bjørn Rannestad, Stig Munk-Nielsen, Kristian Gadgaard, Christian Uhrenfeldt

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Abstract

Detection of Insulated Gate Bipolar Transistor (IGBT) switching transition time (ttr) is a promising Temperature Sensitive Electrical Parameter (TSEP) for condition monitoring of IGBT power modules in converters for wind turbines. The accuracy required on ttr detection is in nano seconds, which typically requires precision timing circuitry, or Analog to Digital Conversion (ADC) rates in hundreds of Mega Samples Per Second (MSPS). A method on calculating the statistically estimated switching transition time (t̂tr) is proposed in this paper. During multiple switching transitions of an IGBT, the IGBT collector-emitter voltage (vce) may be sampled with sample rates in sub MSPS rates, yet with statistical accuracy on estimated t̂tr in nano seconds. A stand alone Converter Monitoring Unit (CMU) which samples vce and IGBT current (ic), was mounted in the converter of a multi Mega Watt (MW) field test wind turbine. The proposed method is validated by testing it on field data from the CMU and by testing it on synthetically generated data. The proposed method is an enabler for low-cost monitoring of converters for wind turbine field applications.
Original languageEnglish
Article number8812625
JournalI E E E Transactions on Instrumentation and Measurement
Volume69
Issue number6
Pages (from-to)3654-3665
Number of pages12
ISSN0018-9456
DOIs
Publication statusPublished - Jun 2020

Keywords

  • Insulated-gate bipolar transistors (IGBTs)
  • monitoring
  • sampling methods

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