Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules

Nianzun Qi; Zhixing Yan; Gao Liu; Morten Rahr Nielsen; Jannick Kjær Jørgensen; Asger Bjørn Jørgensen; Szymon Beczkowski; Bjørn Rannestad; Hongbo Zhao; Stig Munk-Nielsen

doi:10.1109/IPEMC-ECCEAsia60879.2024.10567759

Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules

Nianzun Qi^*, Zhixing Yan, Gao Liu, Morten Rahr Nielsen, Jannick Kjær Jørgensen, Asger Bjørn Jørgensen, Szymon Beczkowski, Bjørn Rannestad, Hongbo Zhao, Stig Munk-Nielsen

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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Abstract

This paper demonstrates the parallel connection of two 10 kV SiC MOSFET modules with a focus on eliminating inter-module oscillations during the turn-on switching event. A dual-gate driver structure is proposed to drive paralleled 10 kV SiC MOSFETs. Based on the platform, the mechanism of inter-module oscillation is observed and analyzed, revealing the cause as the circulating current flowing in the loop with the lowest impedance between paralleled modules. To dampen inter-module oscillations, ferrite beads are added to the gate loop. The effectiveness of the ferrite beads in the paralleling of medium voltage modules case is analyzed and experimentally verified by a double pulse test (DPT) with two paralleled 10 kV SiC MOSFET power modules at 6000 V/ 50 A.

Original language	English
Title of host publication	2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Number of pages	7
Publisher	IEEE (Institute of Electrical and Electronics Engineers)
Publication date	17 May 2024
Pages	2485-2491
ISBN (Print)	979-8-3503-5134-7
ISBN (Electronic)	979-8-3503-5133-0
DOIs	https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567759
Publication status	Published - 17 May 2024
Event	2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) - Chengdu, China Duration: 17 May 2024 → 20 May 2024 https://ieeexplore.ieee.org/xpl/conhome/10567049/proceeding

Conference

Conference	2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)
Country/Territory	China
City	Chengdu
Period	17/05/2024 → 20/05/2024
Internet address	https://ieeexplore.ieee.org/xpl/conhome/10567049/proceeding

Series	International Power Electronics and Motion Control Conference (PEMC)
ISSN	2473-0165

Keywords

10 kV SiC MOSFET
capacitive coupling
ferrite bead
gate stability
inter-module oscillation

Access to Document

10.1109/IPEMC-ECCEAsia60879.2024.10567759

Suppressing_Inter-module_Oscillations_for_Paralleled_10_kV_SiC_MOSFET_ModulesAccepted author manuscript, 4.93 MBLicence: CC BY 4.0

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MVolt: Medium Voltage Power Electronics for Wind Systems
Munk-Nielsen, S. (PI), Uhrenfeldt, C. (CoI), Jørgensen, A. B. (CoI), Jørgensen, J. K. (CoI), Beczkowski, S. M. (Project Participant), Bech, M. M. (Project Participant), Spender-Andersen, G. (Project Participant), Lascu, C. (Project Participant), Zhao, H. (Project Participant), Dalal, D. N. (Project Participant), Kjærsgaard, B. F. (Project Participant), Aunsborg, T. S. (Project Participant), Jacobsen, J. (Project Participant), Mishra, P. (Project Participant) & Steffensen, B. (Project Coordinator)
Innovation Fund Denmark
01/10/2020 → 30/09/2024
Project: Research
Medium Voltage Based on SiC (MV-BASIC)
Munk-Nielsen, S. (PI), Uhrenfeldt, C. (Project Participant), Beczkowski, S. M. (Project Participant), Bech, M. M. (Project Coordinator), Wang, X. (Project Participant), Dalal, D. N. (Project Participant), Jørgensen, J. K. (Project Participant), Zhao, H. (Project Participant), Mishra, P. (Project Participant), Jørgensen, A. B. (Project Participant) & Steffensen, B. (Project Coordinator)
Department of Energy Technology
01/07/2018 → 30/06/2022
Project: Research

Cite this

Qi, N., Yan, Z., Liu, G., Nielsen, M. R., Jørgensen, J. K., Jørgensen, A. B., Beczkowski, S., Rannestad, B., Zhao, H., & Munk-Nielsen, S. (2024). Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules. In 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) (pp. 2485-2491). IEEE (Institute of Electrical and Electronics Engineers). https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567759

Qi, Nianzun ; Yan, Zhixing ; Liu, Gao et al. / Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules. 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). IEEE (Institute of Electrical and Electronics Engineers), 2024. pp. 2485-2491 (International Power Electronics and Motion Control Conference (PEMC)).

@inproceedings{001ca5f414ca4d0ca2d0e26e6c92a4c1,

title = "Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules",

abstract = "This paper demonstrates the parallel connection of two 10 kV SiC MOSFET modules with a focus on eliminating inter-module oscillations during the turn-on switching event. A dual-gate driver structure is proposed to drive paralleled 10 kV SiC MOSFETs. Based on the platform, the mechanism of inter-module oscillation is observed and analyzed, revealing the cause as the circulating current flowing in the loop with the lowest impedance between paralleled modules. To dampen inter-module oscillations, ferrite beads are added to the gate loop. The effectiveness of the ferrite beads in the paralleling of medium voltage modules case is analyzed and experimentally verified by a double pulse test (DPT) with two paralleled 10 kV SiC MOSFET power modules at 6000 V/ 50 A.",

keywords = "10 kV SiC MOSFET, capacitive coupling, ferrite bead, gate stability, inter-module oscillation",

author = "Nianzun Qi and Zhixing Yan and Gao Liu and Nielsen, {Morten Rahr} and J{\o}rgensen, {Jannick Kj{\ae}r} and J{\o}rgensen, {Asger Bj{\o}rn} and Szymon Beczkowski and Bj{\o}rn Rannestad and Hongbo Zhao and Stig Munk-Nielsen",

year = "2024",

month = may,

day = "17",

doi = "10.1109/IPEMC-ECCEAsia60879.2024.10567759",

language = "English",

isbn = "979-8-3503-5134-7",

series = "International Power Electronics and Motion Control Conference (PEMC)",

publisher = "IEEE (Institute of Electrical and Electronics Engineers)",

pages = "2485--2491",

booktitle = "2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)",

address = "United States",

note = " 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia) ; Conference date: 17-05-2024 Through 20-05-2024",

url = "https://ieeexplore.ieee.org/xpl/conhome/10567049/proceeding",

}

Qi, N , Yan, Z , Liu, G , Nielsen, MR , Jørgensen, JK , Jørgensen, AB , Beczkowski, S, Rannestad, B, Zhao, H & Munk-Nielsen, S 2024, Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules. in 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). IEEE (Institute of Electrical and Electronics Engineers), International Power Electronics and Motion Control Conference (PEMC), pp. 2485-2491, 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia), Chengdu, China, 17/05/2024. https://doi.org/10.1109/IPEMC-ECCEAsia60879.2024.10567759

Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules. / Qi, Nianzun ; Yan, Zhixing ; Liu, Gao et al.
2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). IEEE (Institute of Electrical and Electronics Engineers), 2024. p. 2485-2491 (International Power Electronics and Motion Control Conference (PEMC)).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules

AU - Qi, Nianzun

AU - Yan, Zhixing

AU - Liu, Gao

AU - Nielsen, Morten Rahr

AU - Jørgensen, Jannick Kjær

AU - Jørgensen, Asger Bjørn

AU - Beczkowski, Szymon

AU - Rannestad, Bjørn

AU - Zhao, Hongbo

AU - Munk-Nielsen, Stig

PY - 2024/5/17

Y1 - 2024/5/17

N2 - This paper demonstrates the parallel connection of two 10 kV SiC MOSFET modules with a focus on eliminating inter-module oscillations during the turn-on switching event. A dual-gate driver structure is proposed to drive paralleled 10 kV SiC MOSFETs. Based on the platform, the mechanism of inter-module oscillation is observed and analyzed, revealing the cause as the circulating current flowing in the loop with the lowest impedance between paralleled modules. To dampen inter-module oscillations, ferrite beads are added to the gate loop. The effectiveness of the ferrite beads in the paralleling of medium voltage modules case is analyzed and experimentally verified by a double pulse test (DPT) with two paralleled 10 kV SiC MOSFET power modules at 6000 V/ 50 A.

AB - This paper demonstrates the parallel connection of two 10 kV SiC MOSFET modules with a focus on eliminating inter-module oscillations during the turn-on switching event. A dual-gate driver structure is proposed to drive paralleled 10 kV SiC MOSFETs. Based on the platform, the mechanism of inter-module oscillation is observed and analyzed, revealing the cause as the circulating current flowing in the loop with the lowest impedance between paralleled modules. To dampen inter-module oscillations, ferrite beads are added to the gate loop. The effectiveness of the ferrite beads in the paralleling of medium voltage modules case is analyzed and experimentally verified by a double pulse test (DPT) with two paralleled 10 kV SiC MOSFET power modules at 6000 V/ 50 A.

KW - 10 kV SiC MOSFET

KW - capacitive coupling

KW - ferrite bead

KW - gate stability

KW - inter-module oscillation

U2 - 10.1109/IPEMC-ECCEAsia60879.2024.10567759

DO - 10.1109/IPEMC-ECCEAsia60879.2024.10567759

M3 - Article in proceeding

SN - 979-8-3503-5134-7

T3 - International Power Electronics and Motion Control Conference (PEMC)

SP - 2485

EP - 2491

BT - 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)

PB - IEEE (Institute of Electrical and Electronics Engineers)

T2 - 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia)

Y2 - 17 May 2024 through 20 May 2024

ER -

Qi N , Yan Z , Liu G , Nielsen MR , Jørgensen JK , Jørgensen AB et al. Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules. In 2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia). IEEE (Institute of Electrical and Electronics Engineers). 2024. p. 2485-2491. (International Power Electronics and Motion Control Conference (PEMC)). doi: 10.1109/IPEMC-ECCEAsia60879.2024.10567759

Suppressing Inter-module Oscillations for Paralleled 10 kV SiC MOSFET Modules

Abstract

Conference

Keywords

Access to Document

AUB Link

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Projects

MVolt: Medium Voltage Power Electronics for Wind Systems

Medium Voltage Based on SiC (MV-BASIC)

Cite this