Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

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Abstract

The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.
Original languageEnglish
Title of host publicationProceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
Number of pages7
Place of PublicationBusan, Korea (South)
PublisherIEEE Press
Publication dateMay 2019
Article number8796955
ISBN (Print)978-1-7281-1612-9
ISBN (Electronic)978-89-5708-313-0
Publication statusPublished - May 2019
Event2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) - Busan, Korea, Republic of
Duration: 27 May 201930 May 2019

Conference

Conference2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia)
CountryKorea, Republic of
CityBusan
Period27/05/201930/05/2019
SeriesInternational Conference on Power Electronics
ISSN2150-6078

Keywords

  • ANPC inverter
  • Parasitic inductance
  • SiC MOSFET
  • Switching characterization

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    Chen, M., Pan, D., Wang, H., Wang, X., Blaabjerg, F., & Wang, W. (2019). Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application. In Proceedings of 2019 10th International Conference on Power Electronics and ECCE Asia (ICPE 2019 - ECCE Asia) [8796955] IEEE Press. International Conference on Power Electronics https://ieeexplore.ieee.org/document/8796955