Abstract
In this paper the switching speed limits of high power IGBT modules are investigated. The limitation of turn-on and turn-off switching speeds of the IGBTs are experimentally detected in a pulse tester. Different dc-bus stray inductances are considered, as well as the worst case scenario for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions.
| Original language | English |
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| Title of host publication | Proceedings of the 2015 17th European Conference on Power Electronics and Applications (EPE'15-ECCE Europe) |
| Number of pages | 8 |
| Publisher | IEEE Press |
| Publication date | Sept 2015 |
| Pages | 1-8 |
| DOIs | |
| Publication status | Published - Sept 2015 |
| Event | 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 - Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20, Geneva, Switzerland Duration: 8 Sept 2015 → 10 Sept 2015 |
Conference
| Conference | 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 |
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| Location | Centre International de Conférence Genève (CICG), 17 rue Varembé CH . 1211 Genève 20 |
| Country/Territory | Switzerland |
| City | Geneva |
| Period | 08/09/2015 → 10/09/2015 |
Keywords
- High power discrete device
- IGBT
- Power semiconductor device
- Reverse recovery
- Switching losses