Abstract
In this article, a study of the snapback behavior of reverse conducting IGBTs (RC-IGBTs) by means of 2-D TCAD simulations is carried out. Half-cell TCAD models of 1200-V RC-IGBT structures with different snapback voltage levels were generated by varying the peak doping concentration of the punch-through N-buffer region. First observations show that snapback could be an issue for low current switching commutations of paralleled RC-IGBTs operating at low temperatures, where one device falls back into unipolar mode and current is completely misshared. Results show that the RC-IGBT snapback voltage level, circuit variations, and operating conditions play a critical role for determining whether the parallel RC-IGBTs operate in a stable or unstable mode.
| Original language | English |
|---|---|
| Article number | 9457055 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 68 |
| Issue number | 7 |
| Pages (from-to) | 3429-3434 |
| Number of pages | 6 |
| ISSN | 0018-9383 |
| DOIs | |
| Publication status | Published - Jul 2021 |
Bibliographical note
Publisher Copyright:© 1963-2012 IEEE.
Keywords
- Instability
- reverse conducting IGBT (RC-IGBT)
- snapback
- switching