Temperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area

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Abstract

Thermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing.
Original languageEnglish
Title of host publication2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Number of pages8
PublisherIEEE
Publication date2 Oct 2023
Article number10264610
ISBN (Electronic)9789075815412
DOIs
Publication statusPublished - 2 Oct 2023
Event2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark
Duration: 4 Sept 20238 Sept 2023

Conference

Conference2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Country/TerritoryDenmark
CityAalborg
Period04/09/202308/09/2023

Keywords

  • Finite-element method
  • Medium voltage
  • Modeling
  • SiC MOSFET
  • Thermal behavior

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