The Impact of Gate-Driver Parameters Variation and Device Degradation in the PV-Inverter Lifetime

Nicolae Cristian Sintamarean, Huai Wang, Frede Blaabjerg, Francesco Iannuzzo

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

25 Citations (Scopus)
45 Downloads (Pure)

Abstract

This paper introduces a reliability-oriented design tool for a new generation of grid connected PV-inverters. The proposed design tool consists of a real field Mission Profile (MP) model (for one year operation in USA-Arizona), a PV-panel model, a grid connected PV-inverter model, an Electro-Thermal model and the lifetime model of the power semiconductor devices. A simulation model able to consider a one year real field operation conditions (solar irradiance and ambient temperature) is developed. Thus, one year estimation of the converter devices thermal loading distribution is achieved and is further used as an input to a lifetime model. The proposed reliability oriented design tool is used to study the impact of MP-variation, Gate-Driver (GD) parameters variation and device degradation in the PVinverter lifetime. The obtained results indicate that in order to improve the accuracy of the lifetime estimation it is crucial to consider also the device degradation feedback. Moreover the MP of the field where the PV-inverter is operating and the GD parameters selection has an important impact in the converter reliability and it should be considered from the design stage to better optimize the converter design margin.
Original languageEnglish
Title of host publicationProceedings of the 2014 IEEE Energy Conversion Congress and Exposition (ECCE)
Number of pages8
PublisherIEEE Press
Publication dateSept 2014
Pages2257-2264
ISBN (Print)9781479957774
ISBN (Electronic)9781479956982
DOIs
Publication statusPublished - Sept 2014
Event2014 IEEE Energy Conversion Congress and Exposition (ECCE) - Pittsburgh, Pittsburgh, United States
Duration: 14 Sept 201418 Sept 2014

Conference

Conference2014 IEEE Energy Conversion Congress and Exposition (ECCE)
LocationPittsburgh
Country/TerritoryUnited States
CityPittsburgh
Period14/09/201418/09/2014

Keywords

  • Mission profile variation
  • Gate-driver parameters variation
  • Device degradation feedback
  • SiC-devices

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