The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations

Peng Xue; Pooya Davari

doi:10.23919/EPE23ECCEEurope58414.2023.10264332

The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

4 Citations (Scopus)

176 Downloads (Pure)

Abstract

In this paper, the characteristics of dID/dt, dVDS/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.

Original language	English
Title of host publication	2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Number of pages	8
Publisher	IEEE (Institute of Electrical and Electronics Engineers)
Publication date	8 Sept 2023
Pages	1-8
Article number	10264332
ISBN (Print)	979-8-3503-1678-0
ISBN (Electronic)	9789075815412
DOIs	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264332
Publication status	Published - 8 Sept 2023
Event	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023

Conference

Conference	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Country/Territory	Denmark
City	Aalborg
Period	04/09/2023 → 08/09/2023

Keywords

Electromagnetic interference
Kelvin
MOSFET
Negative feedback
Silicon carbide
Statistical analysis
Switching loss

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10.23919/EPE23ECCEEurope58414.2023.10264332

EPE_paperAccepted author manuscript, 1.14 MB

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Cite this

Xue, P., & Davari, P. (2023). The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations. In 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe (pp. 1-8). Article 10264332 IEEE (Institute of Electrical and Electronics Engineers). https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264332

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title = "The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations",

abstract = "In this paper, the characteristics of dID/dt, dVDS/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.",

keywords = "Electromagnetic interference, Kelvin, MOSFET, Negative feedback, Silicon carbide, Statistical analysis, Switching loss",

author = "Peng Xue and Pooya Davari",

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booktitle = "2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe",

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note = "2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) ; Conference date: 04-09-2023 Through 08-09-2023",

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Xue, P & Davari, P 2023, The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations. in 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe., 10264332, IEEE (Institute of Electrical and Electronics Engineers), pp. 1-8, 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark, 04/09/2023. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264332

The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations. / Xue, Peng ; Davari, Pooya.
2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE (Institute of Electrical and Electronics Engineers), 2023. p. 1-8 10264332.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

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T1 - The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations

AU - Xue, Peng

AU - Davari, Pooya

PY - 2023/9/8

Y1 - 2023/9/8

N2 - In this paper, the characteristics of dID/dt, dVDS/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.

AB - In this paper, the characteristics of dID/dt, dVDS/dt and oscillations for 3-pin and 4-pin MOSFETs using Kelvin source and common source configuration are experimentally identified. With theoretical analysis and spice simulation utilized, the common source inductance-induced negative feedback mechanism is investigated. A quantitative analysis is also performed to reveal the trade-off between switching losses and EMI generation between 3-pin and 4-pin MOSFETs.

KW - Electromagnetic interference

KW - Kelvin

KW - MOSFET

KW - Negative feedback

KW - Silicon carbide

KW - Statistical analysis

KW - Switching loss

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U2 - 10.23919/EPE23ECCEEurope58414.2023.10264332

DO - 10.23919/EPE23ECCEEurope58414.2023.10264332

M3 - Article in proceeding

SN - 979-8-3503-1678-0

SP - 1

EP - 8

BT - 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

PB - IEEE (Institute of Electrical and Electronics Engineers)

T2 - 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

Y2 - 4 September 2023 through 8 September 2023

ER -

The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations

Abstract

Conference

Keywords

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AUB Link

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CLEAN-Power: Compatibility and Low electromagnetic Emission Advancements for Next generation Power electronic systems

Cite this

The Trade-off of Switching Losses and EMI Generation for SiC MOSFET with Common Source and Kelvin Source Configurations

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

CLEAN-Power: Compatibility and Low electromagnetic Emission Advancements for Next generation Power electronic systems

Cite this