Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

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Abstract

Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.
Original languageEnglish
Title of host publicationProceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Number of pages7
Place of PublicationGenova, Italy
PublisherIEEE Press
Publication dateSep 2019
Article number8915012
ISBN (Electronic)978-9-0758-1531-3
DOIs
Publication statusPublished - Sep 2019
Event2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy
Duration: 3 Sep 20195 Sep 2019

Conference

Conference2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Country/TerritoryItaly
CityGenova
Period03/09/201905/09/2019

Keywords

  • Packaging
  • Thermal design
  • Simulations
  • Power Module
  • GaN eHEMTs
  • Simulation
  • Gallium nitride (GaN)

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