Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

Asger Bjørn Jørgensen; Tzu-Hsuan Cheng; Douglas Hopkins; Szymon Michal Beczkowski; Christian Uhrenfeldt; Stig Munk-Nielsen

doi:10.23919/EPE.2019.8915012

Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

Asger Bjørn Jørgensen, Tzu-Hsuan Cheng, Douglas Hopkins, Szymon Michal Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

15 Citations (Scopus)

432 Downloads (Pure)

Abstract

Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.

Original language	English
Title of host publication	Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Number of pages	7
Place of Publication	Genova, Italy
Publisher	IEEE Press
Publication date	Sept 2019
Article number	8915012
ISBN (Electronic)	978-9-0758-1531-3
DOIs	https://doi.org/10.23919/EPE.2019.8915012
Publication status	Published - Sept 2019
Event	2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy Duration: 3 Sept 2019 → 5 Sept 2019

Conference

Conference	2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)
Country/Territory	Italy
City	Genova
Period	03/09/2019 → 05/09/2019

Keywords

Packaging
Thermal design
Simulations
Power Module
GaN eHEMTs
Simulation
Gallium nitride (GaN)

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10.23919/EPE.2019.8915012

epe19_ganmodule_ieeecompliantAccepted author manuscript, 2.69 MB

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Cite this

@inproceedings{2ddf6f04f87a4796827ce6558eaa0e97,

title = "Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module",

abstract = "Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 \% in thermal impedance if the PCB board is not included in the simulation model.",

keywords = "Packaging, Thermal design, Simulations, Power Module, GaN eHEMTs, Simulation, Gallium nitride (GaN)",

author = "J{\o}rgensen, \{Asger Bj{\o}rn\} and Tzu-Hsuan Cheng and Douglas Hopkins and Beczkowski, \{Szymon Michal\} and Christian Uhrenfeldt and Stig Munk-Nielsen",

year = "2019",

month = sep,

doi = "10.23919/EPE.2019.8915012",

language = "English",

booktitle = "Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)",

publisher = "IEEE Press",

note = "2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) ; Conference date: 03-09-2019 Through 05-09-2019",

}

Jørgensen, AB, Cheng, T-H, Hopkins, D, Beczkowski, SM, Uhrenfeldt, C & Munk-Nielsen, S 2019, Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. in Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)., 8915012, IEEE Press, Genova, Italy, 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe), Genova, Italy, 03/09/2019. https://doi.org/10.23919/EPE.2019.8915012

Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module. / Jørgensen, Asger Bjørn; Cheng, Tzu-Hsuan; Hopkins, Douglas et al.
Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe). Genova, Italy: IEEE Press, 2019. 8915012.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

AU - Jørgensen, Asger Bjørn

AU - Cheng, Tzu-Hsuan

AU - Hopkins, Douglas

AU - Beczkowski, Szymon Michal

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2019/9

Y1 - 2019/9

N2 - Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.

AB - Compact power modules are emerging which combine both direct bonded copper (DBC) and printed circuit boards (PCB) in integrated structures to achieve fast switching of wide bandgap semiconductors. The literature presenting the new integrated structures only include the DBC in their thermal analysis, and thus the influence of the PCB is often disregarded. In this paper the thermal characteristics of a new integrated GaN eHEMT power module are obtained experimentally. A simulation workflow to extract the thermal characteristics of the integrated module structure using finite element method software is presented and verified. The results predict an error of up to 13 % in thermal impedance if the PCB board is not included in the simulation model.

KW - Packaging

KW - Thermal design

KW - Simulations

KW - Power Module

KW - GaN eHEMTs

KW - Simulation

KW - Gallium nitride (GaN)

UR - https://www.scopus.com/pages/publications/85076702946

U2 - 10.23919/EPE.2019.8915012

DO - 10.23919/EPE.2019.8915012

M3 - Article in proceeding

BT - Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

PB - IEEE Press

CY - Genova, Italy

T2 - 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe)

Y2 - 3 September 2019 through 5 September 2019

ER -

Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

Abstract

Conference

Keywords

Access to Document

AUB Link

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APETT: Advanced Power Electronic Technology and Tools

2020 EPE Outstanding Young EPE Member Award

Cite this

Thermal Characteristics and Simulation of an Integrated GaN eHEMT Power Module

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

APETT: Advanced Power Electronic Technology and Tools

Prizes

2020 EPE Outstanding Young EPE Member Award

Cite this