Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally-Efficient Thermal-Profile Prediction

Research output: Contribution to journalJournal articleResearchpeer-review

18 Downloads (Pure)

Abstract

This paper characterizes the thermal behavior of a commercialized silicon carbide (SiC) power MOSFET module with special concerns on high-temperature operating conditions as well as particular focuses on SiC MOSFET dies. A temperature-dependent Cauer-type thermal model of the SiC MOSFET is proposed and extracted based on offline finite-element simulations. This Cauer model is able to reveal the temperature-dependent thermal property of each packaging layer and it is suitable for the high-temperature thermal-profile prediction with sufficient computational efficiency. Due to the temperature-dependent thermal properties of the SiC die and ceramic material, the junction-heatsink thermal resistance can be raised by more than 10% under high-temperature conditions (up to 200 ◦C), which can considerably worsen thermal estimations of the SiC die and its packaging materials. Furthermore, the experimental measurement of transient thermal impedance was conducted under operating temperature variations (with virtual junction temperature ranging from 60.5 ◦C to 199.6 ◦C), and the effectiveness of the proposed temperature-dependent Cauer model was fully validated.
Original languageEnglish
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
Pages (from-to)1-12
Number of pages12
ISSN2168-6777
DOIs
Publication statusE-pub ahead of print - Mar 2020

Keywords

  • Finite-element method (FEM)
  • high operating temperature
  • computational efficiency
  • SiC power MOSFET module
  • temperature-dependent Cauer model

Fingerprint Dive into the research topics of 'Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally-Efficient Thermal-Profile Prediction'. Together they form a unique fingerprint.

  • Projects

    Cite this