Thermal cycling characterization of integrated GaN power module

Zhongchao Sun; Masaki Takahashi; Stig Munk-Nielsen; Asger Bjørn Jørgensen

doi:10.23919/EPE23ECCEEurope58414.2023.10264265

Thermal cycling characterization of integrated GaN power module

Zhongchao Sun^*, Masaki Takahashi, Stig Munk-Nielsen, Asger Bjørn Jørgensen

^*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

2 Citations (Scopus)

10 Downloads (Pure)

Abstract

A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.

Original language	English
Title of host publication	2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Number of pages	7
Publisher	IEEE (Institute of Electrical and Electronics Engineers)
Publication date	4 Sept 2023
Article number	10264265
ISBN (Print)	979-8-3503-1678-0
ISBN (Electronic)	978-9-0758-1541-2
DOIs	https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264265
Publication status	Published - 4 Sept 2023
Event	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023

Conference

Conference	2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Country/Territory	Denmark
City	Aalborg
Period	04/09/2023 → 08/09/2023

Keywords

Degradation
Failure modes
Gallium Nitride (GaN)
Packaging
Thermal cycling

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10.23919/EPE23ECCEEurope58414.2023.10264265

Thermal_cycling_characterization_of_integrated_GaN_power_moduleAccepted author manuscript, 4.24 MB

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Cite this

@inproceedings{16b48a5fd7454e2bb75bdc3fa66c9775,

title = "Thermal cycling characterization of integrated GaN power module",

abstract = "A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.",

keywords = "Degradation, Failure modes, Gallium Nitride (GaN), Packaging, Thermal cycling",

author = "Zhongchao Sun and Masaki Takahashi and Stig Munk-Nielsen and J{\o}rgensen, {Asger Bj{\o}rn}",

year = "2023",

month = sep,

day = "4",

doi = "10.23919/EPE23ECCEEurope58414.2023.10264265",

language = "English",

isbn = "979-8-3503-1678-0",

booktitle = "2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe",

publisher = "IEEE (Institute of Electrical and Electronics Engineers)",

address = "United States",

note = "2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) ; Conference date: 04-09-2023 Through 08-09-2023",

}

Sun, Z , Takahashi, M , Munk-Nielsen, S & Jørgensen, AB 2023, Thermal cycling characterization of integrated GaN power module. in 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe., 10264265, IEEE (Institute of Electrical and Electronics Engineers), 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark, 04/09/2023. https://doi.org/10.23919/EPE23ECCEEurope58414.2023.10264265

Thermal cycling characterization of integrated GaN power module. / Sun, Zhongchao ; Takahashi, Masaki ; Munk-Nielsen, Stig et al.
2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe. IEEE (Institute of Electrical and Electronics Engineers), 2023. 10264265.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Thermal cycling characterization of integrated GaN power module

AU - Sun, Zhongchao

AU - Takahashi, Masaki

AU - Munk-Nielsen, Stig

AU - Jørgensen, Asger Bjørn

PY - 2023/9/4

Y1 - 2023/9/4

N2 - A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.

AB - A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.

KW - Degradation

KW - Failure modes

KW - Gallium Nitride (GaN)

KW - Packaging

KW - Thermal cycling

UR - http://www.scopus.com/inward/record.url?scp=85175145235&partnerID=8YFLogxK

U2 - 10.23919/EPE23ECCEEurope58414.2023.10264265

DO - 10.23919/EPE23ECCEEurope58414.2023.10264265

M3 - Article in proceeding

SN - 979-8-3503-1678-0

BT - 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe

PB - IEEE (Institute of Electrical and Electronics Engineers)

T2 - 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)

Y2 - 4 September 2023 through 8 September 2023

ER -

Thermal cycling characterization of integrated GaN power module

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Digital design-based and data-driven combined power electronics packaging reliability analysis method

CoDE: Center of Digitalized Electronics (CoDE)

Cite this

Thermal cycling characterization of integrated GaN power module

Abstract

Conference

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

Digital design-based and data-driven combined power electronics packaging reliability analysis method

CoDE: Center of Digitalized Electronics (CoDE)

Cite this