Thermal cycling characterization of integrated GaN power module

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

Abstract

A thermal cycling test is developed on a low parasitic inductance integrated GaN power module by monitoring the electrical and thermal parameters. The failure points of DBC and solder attach leading to increased thermal resistance are located, and the failure mechanism is analyzed based on Scanning Acoustic Microscope observation.
Original languageEnglish
Title of host publication2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe
Number of pages7
PublisherIEEE
Publication date4 Sept 2023
Article number10264265
ISBN (Print)979-8-3503-1678-0
ISBN (Electronic)978-9-0758-1541-2
DOIs
Publication statusPublished - 4 Sept 2023
Event2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe) - Aalborg, Denmark
Duration: 4 Sept 20238 Sept 2023

Conference

Conference2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe)
Country/TerritoryDenmark
CityAalborg
Period04/09/202308/09/2023

Keywords

  • Degradation
  • Failure modes
  • Gallium Nitride (GaN)
  • Packaging
  • Thermal cycling

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