Thermal damage in SiC Schottky diodes induced by SE heavy ions

C. Abbate, G. Busatto*, P. Cova, N. Delmonte, F. Giuliani, Francesco Iannuzzo, A. Sanseverino, F. Velardi

*Corresponding author

Research output: Contribution to journalJournal articleResearchpeer-review

14 Citations (Scopus)

Abstract

The failure of SiC Schottky diodes due to the impact of high energy heavy ions is investigated by means of electro-thermal and thermal finite element simulations. In particular, 3D ATLAS simulation of a small portion of the diode structure is used for computing the dissipated power density, which is subsequently used as input for the thermal COMSOL simulation of the complete system including chip and packaging. Results show that, as a consequence of the ion penetrating through the device, the temperature at the Schottky barrier becomes bigger than the SiC melting point for a time large enough to cause permanent damages to the SiC lattice. Simulation results are in good agreement with experiments presented in the literature.
Original languageEnglish
JournalMicroelectronics Reliability
Volume54
Issue number9-10
Pages (from-to)2200-2206
Number of pages7
ISSN0026-2714
DOIs
Publication statusPublished - 1 Jan 2014
Externally publishedYes

Keywords

  • Electro-thermal simulations
  • Heavy ion irradiation
  • Radiation effects
  • Schottky diodes
  • Single Event Burnout

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