The short circuit behaviour of commercial 200 V AlGaN/GaN HFET devices is investigated, clearly evidencing a poor sustainability of such condition. It is observed that, during overcurrent, the drain current tends to increase, exhibiting unstable behaviour. A confirmation of such instability is given by the gate leakage, which also diverges during critical commutations. Measurements evidence a decrease in the threshold voltage at very high temperatures, which is a possible interpretation of the phenomenon. Some waveforms showing a rupture at 50% of the nominal voltage have been reported, evidencing thermal breakdown in about 2 μs.
|Number of pages||5|
|Publication status||Published - 1 Sept 2013|
|Event||25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2014 - Berlin, Germany|
Duration: 29 Sept 2014 → 2 Oct 2014
|Conference||25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2014|
|Period||29/09/2014 → 02/10/2014|