Thermal instability during short circuit of normally-off AlGaN/GaN HFETs

C. Abbate; Francesco Iannuzzo; G. Busatto

doi:10.1016/j.microrel.2013.07.119

Thermal instability during short circuit of normally-off AlGaN/GaN HFETs

C. Abbate, Francesco Iannuzzo^*, G. Busatto

^*Corresponding author for this work

Research output: Contribution to journal › Conference article in Journal › Research › peer-review

24 Citations (Scopus)

Abstract

The short circuit behaviour of commercial 200 V AlGaN/GaN HFET devices is investigated, clearly evidencing a poor sustainability of such condition. It is observed that, during overcurrent, the drain current tends to increase, exhibiting unstable behaviour. A confirmation of such instability is given by the gate leakage, which also diverges during critical commutations. Measurements evidence a decrease in the threshold voltage at very high temperatures, which is a possible interpretation of the phenomenon. Some waveforms showing a rupture at 50% of the nominal voltage have been reported, evidencing thermal breakdown in about 2 μs.

Original language	English
Journal	Microelectronics Reliability
Volume	53
Issue number	9-11
Pages (from-to)	1481-1485
Number of pages	5
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2013.07.119
Publication status	Published - 1 Sept 2013
Externally published	Yes
Event	25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2014 - Berlin, Germany Duration: 29 Sept 2014 → 2 Oct 2014

Conference

Conference	25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2014
Country/Territory	Germany
City	Berlin
Period	29/09/2014 → 02/10/2014

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@inproceedings{4ada2fe20d5d4f419c0c92be59b27d98,

title = "Thermal instability during short circuit of normally-off AlGaN/GaN HFETs",

abstract = "The short circuit behaviour of commercial 200 V AlGaN/GaN HFET devices is investigated, clearly evidencing a poor sustainability of such condition. It is observed that, during overcurrent, the drain current tends to increase, exhibiting unstable behaviour. A confirmation of such instability is given by the gate leakage, which also diverges during critical commutations. Measurements evidence a decrease in the threshold voltage at very high temperatures, which is a possible interpretation of the phenomenon. Some waveforms showing a rupture at 50% of the nominal voltage have been reported, evidencing thermal breakdown in about 2 μs.",

author = "C. Abbate and Francesco Iannuzzo and G. Busatto",

year = "2013",

month = sep,

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doi = "10.1016/j.microrel.2013.07.119",

language = "English",

volume = "53",

pages = "1481--1485",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Pergamon Press",

number = "9-11",

note = "25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2014 ; Conference date: 29-09-2014 Through 02-10-2014",

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TY - GEN

T1 - Thermal instability during short circuit of normally-off AlGaN/GaN HFETs

AU - Abbate, C.

AU - Iannuzzo, Francesco

AU - Busatto, G.

PY - 2013/9/1

Y1 - 2013/9/1

N2 - The short circuit behaviour of commercial 200 V AlGaN/GaN HFET devices is investigated, clearly evidencing a poor sustainability of such condition. It is observed that, during overcurrent, the drain current tends to increase, exhibiting unstable behaviour. A confirmation of such instability is given by the gate leakage, which also diverges during critical commutations. Measurements evidence a decrease in the threshold voltage at very high temperatures, which is a possible interpretation of the phenomenon. Some waveforms showing a rupture at 50% of the nominal voltage have been reported, evidencing thermal breakdown in about 2 μs.

AB - The short circuit behaviour of commercial 200 V AlGaN/GaN HFET devices is investigated, clearly evidencing a poor sustainability of such condition. It is observed that, during overcurrent, the drain current tends to increase, exhibiting unstable behaviour. A confirmation of such instability is given by the gate leakage, which also diverges during critical commutations. Measurements evidence a decrease in the threshold voltage at very high temperatures, which is a possible interpretation of the phenomenon. Some waveforms showing a rupture at 50% of the nominal voltage have been reported, evidencing thermal breakdown in about 2 μs.

U2 - 10.1016/j.microrel.2013.07.119

DO - 10.1016/j.microrel.2013.07.119

M3 - Conference article in Journal

AN - SCOPUS:84886926413

SN - 0026-2714

VL - 53

SP - 1481

EP - 1485

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 9-11

T2 - 25th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2014

Y2 - 29 September 2014 through 2 October 2014

ER -

Thermal instability during short circuit of normally-off AlGaN/GaN HFETs

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