Thermal Mapping of Power Semiconductors in H-Bridge Circuit

Dao Zhou; yingzhou peng; Francesco Iannuzzo; Michael Hartmann; Frede Blaabjerg

doi:10.3390/app10124340

Thermal Mapping of Power Semiconductors in H-Bridge Circuit

Dao Zhou, yingzhou peng, Francesco Iannuzzo, Michael Hartmann, Frede Blaabjerg

Research output: Contribution to journal › Journal article › Research › peer-review

7 Citations (Scopus)

65 Downloads (Pure)

Abstract

In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.

Original language	English
Article number	4340
Journal	Applied Sciences
Volume	10
Issue number	12
Pages (from-to)	1-13
Number of pages	13
ISSN	2076-3417
DOIs	https://doi.org/10.3390/app10124340
Publication status	Published - Jun 2020

Keywords

Loss dissipation
Power semiconductor
Thermal stress

Access to Document

10.3390/app10124340Licence: CC BY 4.0

Open Access articleFinal published version, 5.68 MBLicence: CC BY 4.0

AUB Link

Search for the material in Aalborg University Library's search engine

Cite this

@article{3e25a8ef3552471f93dfde9165e2d7e8,

title = "Thermal Mapping of Power Semiconductors in H-Bridge Circuit",

abstract = "In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors{\textquoteright} (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.",

keywords = "Loss dissipation, Power semiconductor, Thermal stress",

author = "Dao Zhou and yingzhou peng and Francesco Iannuzzo and Michael Hartmann and Frede Blaabjerg",

year = "2020",

month = jun,

doi = "10.3390/app10124340",

language = "English",

volume = "10",

pages = "1--13",

journal = "Applied Sciences",

issn = "2076-3417",

publisher = "Balkan Society of Geometers",

number = "12",

}

TY - JOUR

T1 - Thermal Mapping of Power Semiconductors in H-Bridge Circuit

AU - Zhou, Dao

AU - peng, yingzhou

AU - Iannuzzo, Francesco

AU - Hartmann, Michael

AU - Blaabjerg, Frede

PY - 2020/6

Y1 - 2020/6

N2 - In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.

AB - In this paper, a universal H-bridge circuit is used as a loading emulator to investigate the loss and thermal models of the power semiconductor. Based on its operation principle and modulation method, the dominating factors’ (e.g., power factor, loading current, fundamental frequency, and switching frequency) impact on the thermal stress of power semiconductors is considerably evaluated. The junction temperature in terms of the mean value and its swing is verified by using Piecewise Linear Electrical Circuit Simulation (PLECS) simulation and experimental setup. It helps to allocate the loading condition in order to obtain the desired thermal stress.

KW - Loss dissipation

KW - Power semiconductor

KW - Thermal stress

UR - http://www.scopus.com/inward/record.url?scp=85087304946&partnerID=8YFLogxK

U2 - 10.3390/app10124340

DO - 10.3390/app10124340

M3 - Journal article

SN - 2076-3417

VL - 10

SP - 1

EP - 13

JO - Applied Sciences

JF - Applied Sciences

IS - 12

M1 - 4340

ER -

Thermal Mapping of Power Semiconductors in H-Bridge Circuit

Abstract

Keywords

Access to Document

AUB Link

Other files and links

Fingerprint

Advanced Converter-level Condition Monitoring for Power Electronics Components

Cite this