Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions

Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Francesco Iannuzzo, Mohammad Tavakoli Bina

Research output: Contribution to journalConference article in JournalResearchpeer-review

7 Citations (Scopus)
27 Downloads (Pure)

Abstract

To assess power devices’ reliability, it is crucial to have a relatively accurate thermal approach which provides valid temperature estimates. In this paper, a commercial Si IGBT and SiC MOSFET power modules are investigated. Also, the electric current-induced effects on bond wires and the correlation between the non-uniform temperature distribution and electrical conductivity of the sensitive constituent materials are studied. A more realistic active area of the die is defined by excluding inactive regions, i.e., the gate area, gate runners, and termination ring. Also, the electric current distribution among parallel bond wires attached to the dies’ metalization pads is investigated. A comparison between an approach which includes all the above aspects with a conventional one where a thermal power with the same total value, but unifrom, is injected into the semiconductor dies is made, While an acceptable error is found for Si IGBTs, a very significant difference is observed in SiC MOSFETs.
Original languageEnglish
JournalMicroelectronics Reliability
Volume88-90
Pages (from-to)1135-1140
Number of pages6
ISSN0026-2714
DOIs
Publication statusPublished - Sep 2018
Event29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - AKKC, Aalborg, Denmark
Duration: 1 Oct 20185 Oct 2018
Conference number: 29th
http://www.esref2018conf.org/

Conference

Conference29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Number29th
LocationAKKC
CountryDenmark
CityAalborg
Period01/10/201805/10/2018
Internet address

Keywords

  • Active area
  • Bond wire
  • Electric current
  • Electrical conductivity
  • Finite element method
  • Non-uniform temperature distribution
  • Si IGBT
  • SiC MOSFET

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