Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

Emre Gurpinar, Alberto Castellazzi, Francesco Iannuzzo, Yongheng Yang, Frede Blaabjerg

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

4 Citations (Scopus)

Abstract

In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.
Original languageEnglish
Title of host publicationProceedings of the 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016
Number of pages8
PublisherIEEE Press
Publication dateSep 2016
Pages1-8
Article numberEC-0548
ISBN (Electronic)978-1-5090-0737-0
DOIs
Publication statusPublished - Sep 2016
Event 8th Annual IEEE Energy Conversion Congress & Exposition: ECCE 2016 - Milwaukee, WI, United States
Duration: 18 Sep 201622 Sep 2016
http://www.ieee-ecce.org/

Conference

Conference 8th Annual IEEE Energy Conversion Congress & Exposition
CountryUnited States
CityMilwaukee, WI
Period18/09/201622/09/2016
SponsorIEEE, IEEE Industry Applications Society (IAS), IEEE Power Electronics and Industry Applications Societies (PELS)
Internet address

Keywords

  • Wide bandgap (WBG) power devices
  • HEMT, three-level active neutral point clamped (3L-ANPC) converter
  • Photovoltaic (PV) systems
  • Gallium-nitride (GaN)

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    Cite this

    Gurpinar, E., Castellazzi, A., Iannuzzo, F., Yang, Y., & Blaabjerg, F. (2016). Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter. In Proceedings of the 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016 (pp. 1-8). [EC-0548] IEEE Press. https://doi.org/10.1109/ECCE.2016.7855540