X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design

Yelin Wang, Troels Studsgaard Nielsen, Ole Kiel Jensen, Torben Larsen

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)

Abstract

X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2nd-order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3rd-order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.
Original languageEnglish
Title of host publicationNumerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on
Number of pages4
PublisherIEEE
Publication date2014
DOIs
Publication statusPublished - 2014
Event: IEEE International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave and Terahertz Applications - Pavia, Italy
Duration: 14 May 201416 May 2014

Conference

Conference: IEEE International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave and Terahertz Applications
CountryItaly
CityPavia
Period14/05/201416/05/2014
SeriesInternational Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings

Fingerprint

Gallium nitride
Scattering parameters
Power amplifiers
Linear systems
Nonlinear systems
Transistors
Tuning
Power transistors

Cite this

Wang, Y., Nielsen, T. S., Jensen, O. K., & Larsen, T. (2014). X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design. In Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on IEEE. International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings https://doi.org/10.1109/NEMO.2014.6995691
Wang, Yelin ; Nielsen, Troels Studsgaard ; Jensen, Ole Kiel ; Larsen, Torben. / X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design. Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on. IEEE, 2014. (International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings).
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title = "X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design",
abstract = "X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2nd-order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3rd-order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.",
author = "Yelin Wang and Nielsen, {Troels Studsgaard} and Jensen, {Ole Kiel} and Torben Larsen",
year = "2014",
doi = "10.1109/NEMO.2014.6995691",
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Wang, Y, Nielsen, TS, Jensen, OK & Larsen, T 2014, X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design. in Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on. IEEE, International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings, Pavia, Italy, 14/05/2014. https://doi.org/10.1109/NEMO.2014.6995691

X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design. / Wang, Yelin; Nielsen, Troels Studsgaard; Jensen, Ole Kiel; Larsen, Torben.

Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on. IEEE, 2014. (International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings).

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

TY - GEN

T1 - X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design

AU - Wang, Yelin

AU - Nielsen, Troels Studsgaard

AU - Jensen, Ole Kiel

AU - Larsen, Torben

PY - 2014

Y1 - 2014

N2 - X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2nd-order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3rd-order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.

AB - X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned only up to the 2nd-order harmonic. However, it proves that the model can still accurately approximate the behavior of the transistor under impedance tuning up to the 3rd-order harmonic. The simulation results preliminarily validate the concept of utilizing the X-parameter based modeling technique to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept.

U2 - 10.1109/NEMO.2014.6995691

DO - 10.1109/NEMO.2014.6995691

M3 - Article in proceeding

BT - Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on

PB - IEEE

ER -

Wang Y, Nielsen TS, Jensen OK, Larsen T. X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design. In Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications (NEMO), 2014 International Conference on. IEEE. 2014. (International Conference on Numerical Electromagnetic Modeling and Optimization for RF, Microwave, and Terahertz Applications proceedings). https://doi.org/10.1109/NEMO.2014.6995691