Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

Emre Gurpinar; Alberto Castellazzi; Francesco Iannuzzo; Yongheng Yang; Frede Blaabjerg

doi:10.1109/ECCE.2016.7855540

Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

Emre Gurpinar, Alberto Castellazzi, Francesco Iannuzzo, Yongheng Yang, Frede Blaabjerg

AAU Energi

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

13 Citationer (Scopus)

Abstract

In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

Originalsprog	Engelsk
Titel	Proceedings of the 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016
Antal sider	8
Forlag	IEEE Press
Publikationsdato	sep. 2016
Sider	1-8
Artikelnummer	EC-0548
ISBN (Elektronisk)	978-1-5090-0737-0
DOI	https://doi.org/10.1109/ECCE.2016.7855540
Status	Udgivet - sep. 2016
Begivenhed	8th Annual IEEE Energy Conversion Congress & Exposition: ECCE 2016 - Milwaukee, WI, USA Varighed: 18 sep. 2016 → 22 sep. 2016 http://www.ieee-ecce.org/

Konference

Konference	8th Annual IEEE Energy Conversion Congress & Exposition
Land/Område	USA
By	Milwaukee, WI
Periode	18/09/2016 → 22/09/2016
Sponsor	IEEE, IEEE Industry Applications Society (IAS), IEEE Power Electronics and Industry Applications Societies (PELS)
Internetadresse	http://www.ieee-ecce.org/

Adgang til dokumentet

10.1109/ECCE.2016.7855540

AUB Link

Søg efter materialet i Aalborg Universitetsbiblioteks søgemaskine

Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Projekter: Projekt › Forskning

Citationsformater

@inproceedings{6c0e86aed2b24e96b8fa928828ef6a58,

title = "Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter",

abstract = "In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.",

keywords = "Wide bandgap (WBG) power devices, HEMT, three-level active neutral point clamped (3L-ANPC) converter, Photovoltaic (PV) systems, Gallium-nitride (GaN)",

author = "Emre Gurpinar and Alberto Castellazzi and Francesco Iannuzzo and Yongheng Yang and Frede Blaabjerg",

year = "2016",

month = sep,

doi = "10.1109/ECCE.2016.7855540",

language = "English",

pages = "1--8",

booktitle = "Proceedings of the 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016",

publisher = "IEEE Press",

note = " 8th Annual IEEE Energy Conversion Congress & Exposition : ECCE 2016, ECCE 2016 ; Conference date: 18-09-2016 Through 22-09-2016",

url = "http://www.ieee-ecce.org/",

}

Gurpinar, E, Castellazzi, A, Iannuzzo, F, Yang, Y & Blaabjerg, F 2016, Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter. i Proceedings of the 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016., EC-0548, IEEE Press, s. 1-8, 8th Annual IEEE Energy Conversion Congress & Exposition, Milwaukee, WI, USA, 18/09/2016. https://doi.org/10.1109/ECCE.2016.7855540

Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter. / Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco et al.
Proceedings of the 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016. IEEE Press, 2016. s. 1-8 EC-0548.

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

AU - Gurpinar, Emre

AU - Castellazzi, Alberto

AU - Iannuzzo, Francesco

AU - Yang, Yongheng

AU - Blaabjerg, Frede

PY - 2016/9

Y1 - 2016/9

N2 - In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

AB - In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours based on SPICE model of the converter is analysed. Experimental results on the designed 3L-ANPC with the output power of up to 1 kW are presented, which verifies the performance of the proposed design in terms of ultra-low inductance.

KW - Wide bandgap (WBG) power devices

KW - HEMT, three-level active neutral point clamped (3L-ANPC) converter

KW - Photovoltaic (PV) systems

KW - Gallium-nitride (GaN)

U2 - 10.1109/ECCE.2016.7855540

DO - 10.1109/ECCE.2016.7855540

M3 - Article in proceeding

SP - 1

EP - 8

BT - Proceedings of the 8th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2016

PB - IEEE Press

T2 - 8th Annual IEEE Energy Conversion Congress & Exposition

Y2 - 18 September 2016 through 22 September 2016

ER -

Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

Abstract

Konference

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Center Of Reliable Power Electronics (CORPE)

Citationsformater