Abstract
Power electronic systems have gradually gained an important status in a wide range of industrial applications such as renewable generation, motor drives, automotive, and railway transportation. Accordingly, recent research makes an effort to improve the reliability of power electronic systems to comply with more stringent constraints on safety, cost, and availability. The power devices are one of the most reliability-critical components in power electronic systems. Therefore, its condition monitoring plays an important role to improve the reliability of power electronic systems. This paper proposes a condition monitoring method of insulated-gate bipolar transistor (IGBT) modules. In the first section of this paper, a structure of a conventional IGBT module and a related parameter for the condition monitoring are explained. Then, a proposed real-time on-state collector-emitter voltage measurement circuit and condition monitoring strategies under different operating conditions are described. Finally, experimental results confirm the feasibility and effectiveness of the proposed method.
| Original language | English |
|---|---|
| Article number | 7762929 |
| Journal | IEEE Transactions on Power Electronics |
| Volume | 32 |
| Issue number | 10 |
| Pages (from-to) | 7990-7997 |
| Number of pages | 8 |
| ISSN | 0885-8993 |
| DOIs | |
| Publication status | Published - Oct 2017 |
Keywords
- Condition monitoring
- IGBT module
- Insulated-gate bipolar transistor (IGBT)
- Power converter
- Reliability
- Wear-out failure