A Comparative Study on Converter-Level On-State Voltage Measurement Circuits for Power Semiconductor Devices

Yingzhou Peng, Huai Wang

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

2 Citations (Scopus)
5 Downloads (Pure)

Abstract

The on-state voltage is a key characteristic parameter and relative to the health condition and junction temperature of power semiconductor devices. Hence, it is widely used to evaluate the reliability and realize the predictive maintenance of power devices. Recently, three converter-level measurement circuits are proposed, capable of extracting the on-state voltage of all power devices in a power converter with one circuit only. In this paper, a comparative study on these three converter-level circuits is given in terms of hardware design, operational performance, and practical implementation, which guides the selection and design of suitable measurement circuit for different applications. The comparisons are illustrated with theoretical analyses and experimental results.
Original languageEnglish
Title of host publication2021 IEEE Energy Conversion Congress and Exposition (ECCE)
Publication date16 Nov 2021
Pages3638-3643
ISBN (Print)978-1-7281-6128-0
ISBN (Electronic)978-1-7281-5135-9
DOIs
Publication statusPublished - 16 Nov 2021
Event2021 IEEE Energy Conversion Congress and Exposition (ECCE) - Vancouver, BC, Canada
Duration: 10 Oct 202114 Oct 2021

Conference

Conference2021 IEEE Energy Conversion Congress and Exposition (ECCE)
LocationVancouver, BC, Canada
Period10/10/202114/10/2021
SeriesIEEE Energy Conversion Congress and Exposition
ISSN2329-3721

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