A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient

Peng Xue; Pooya Davari

doi:10.1109/JESTPE.2023.3243856

A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient

Peng Xue^*, Pooya Davari

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

1 Citation (Scopus)

108 Downloads (Pure)

Abstract

In this article, an analytical model is proposed to model collector-emitter voltage rising slope (dVCEdt) of field-stop insulated gate bipolar transistor (FS IGBT) during the turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during VCE rise transient is investigated. Based on the improved understanding of the VCE rise transient, an analytical solution of the excess carrier distribution in the N-base region and field-stop (FS) layer is derived. An analytical model for dVCE/dt of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters is included in the model. In the end, the double-pulse tests are performed on 650-V/40-A and 1200-V/40-A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.

Original language	English
Journal	I E E E Journal of Emerging and Selected Topics in Power Electronics
Volume	11
Issue number	3
Pages (from-to)	3173-3183
Number of pages	11
ISSN	2168-6777
DOIs	https://doi.org/10.1109/JESTPE.2023.3243856
Publication status	Published - 1 Jun 2023

Keywords

Analytical models
Capacitance
Charge carrier density
Germanium
IGBT modeling
Insulated gate bipolar transistors
Logic gates
Transient analysis
collector-emitter voltage rising slope
field-stop (FS) IGBT
turn-off transient

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10.1109/JESTPE.2023.3243856

Final Accepted VersionAccepted author manuscript, 5.2 MB

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@article{7d0366f4897644a4aa4e7410730f9094,

title = "A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient",

abstract = "In this article, an analytical model is proposed to model collector-emitter voltage rising slope (dVCEdt) of field-stop insulated gate bipolar transistor (FS IGBT) during the turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during VCE rise transient is investigated. Based on the improved understanding of the VCE rise transient, an analytical solution of the excess carrier distribution in the N-base region and field-stop (FS) layer is derived. An analytical model for dVCE/dt of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters is included in the model. In the end, the double-pulse tests are performed on 650-V/40-A and 1200-V/40-A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.",

keywords = "Analytical models, Capacitance, Charge carrier density, Germanium, IGBT modeling, Insulated gate bipolar transistors, Logic gates, Transient analysis, collector-emitter voltage rising slope, field-stop (FS) IGBT, turn-off transient",

author = "Peng Xue and Pooya Davari",

year = "2023",

month = jun,

day = "1",

doi = "10.1109/JESTPE.2023.3243856",

language = "English",

volume = "11",

pages = "3173--3183",

journal = "I E E E Journal of Emerging and Selected Topics in Power Electronics",

issn = "2168-6777",

publisher = "IEEE",

number = "3",

}

TY - JOUR

T1 - A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient

AU - Xue, Peng

AU - Davari, Pooya

PY - 2023/6/1

Y1 - 2023/6/1

N2 - In this article, an analytical model is proposed to model collector-emitter voltage rising slope (dVCEdt) of field-stop insulated gate bipolar transistor (FS IGBT) during the turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during VCE rise transient is investigated. Based on the improved understanding of the VCE rise transient, an analytical solution of the excess carrier distribution in the N-base region and field-stop (FS) layer is derived. An analytical model for dVCE/dt of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters is included in the model. In the end, the double-pulse tests are performed on 650-V/40-A and 1200-V/40-A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.

AB - In this article, an analytical model is proposed to model collector-emitter voltage rising slope (dVCEdt) of field-stop insulated gate bipolar transistor (FS IGBT) during the turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during VCE rise transient is investigated. Based on the improved understanding of the VCE rise transient, an analytical solution of the excess carrier distribution in the N-base region and field-stop (FS) layer is derived. An analytical model for dVCE/dt of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters is included in the model. In the end, the double-pulse tests are performed on 650-V/40-A and 1200-V/40-A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.

KW - Analytical models

KW - Capacitance

KW - Charge carrier density

KW - Germanium

KW - IGBT modeling

KW - Insulated gate bipolar transistors

KW - Logic gates

KW - Transient analysis

KW - collector-emitter voltage rising slope

KW - field-stop (FS) IGBT

KW - turn-off transient

UR - http://www.scopus.com/inward/record.url?scp=85149369301&partnerID=8YFLogxK

U2 - 10.1109/JESTPE.2023.3243856

DO - 10.1109/JESTPE.2023.3243856

M3 - Journal article

SN - 2168-6777

VL - 11

SP - 3173

EP - 3183

JO - I E E E Journal of Emerging and Selected Topics in Power Electronics

JF - I E E E Journal of Emerging and Selected Topics in Power Electronics

IS - 3

ER -

A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient

Abstract

Keywords

UN SDGs

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CLEAN-Power: Compatibility and Low electromagnetic Emission Advancements for Next generation Power electronic systems

Cite this

A Temperature-Dependent dVCE/dt model for Field-Stop IGBT at Turn-off Transient

Abstract

Keywords

UN SDGs

Access to Document

AUB Link

Other files and links

Fingerprint

Projects

CLEAN-Power: Compatibility and Low electromagnetic Emission Advancements for Next generation Power electronic systems

Cite this