Junction Temperature Estimation for IGBT Modules Through Knee Voltage

Xing Wei*, Bo Yao, Yingzhou Peng, Huai Wang

*Corresponding author for this work

Research output: Contribution to book/anthology/report/conference proceedingArticle in proceedingResearchpeer-review

1 Citation (Scopus)

Abstract

Thermo-sensitive electrical parameters (TSEPs) are widely employed in the junction temperature estimation of insulated gate bipolar transistor (IGBT) modules. In this paper, the IGBT on-state voltage at a low conduction current of tens of milliamps is explored as a novel indicator and named IGBT knee voltage. Unlike existing TSEPs, this specific on-state voltage is independent of the operating current and package-level degradation of IGBT modules and has a monotonic thermal dependence. As a result, the junction temperature can be estimated based on the IGBT on-state saturation voltage information without the need for synchronized current sampling and dedicated degradation calibration. A single-phase inverter case study is presented to demonstrate the proposed method. The experimental results verify the monotonic dependence between the IGBT knee voltage and junction temperature.

Original languageEnglish
Title of host publication2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia
Number of pages5
PublisherIEEE
Publication date2022
Pages461-465
ISBN (Electronic)9784886864253
DOIs
Publication statusPublished - 2022
Event2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia - Himeji, Japan
Duration: 15 May 202219 May 2022

Conference

Conference2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia
Country/TerritoryJapan
CityHimeji
Period15/05/202219/05/2022
SponsorIEEE Industrial Electronics Society (IES), IEEE Industry Aplications Society (IAS), IEEE Power Electronics Society (PELS)
Series2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia

Bibliographical note

Publisher Copyright:
© 2022 IEEJ-IAS.

Keywords

  • condition monitoring
  • Insulated gate bipolar transistor
  • junction temperature
  • knee voltage

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