Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p⁺n Diodes

Keyphrases

• P-n Diode 100%
• PureGaB 100%
• Germanium 100%
• Interdiffusion Barrier 66%
• Ge Islands 33%
• Entrance Window 33%
• Interconnect Metallization 33%
• Low Contact Resistance 33%
• Ge Crystal 33%
• Microgroove 33%
• Electron Energy 33%
• Si Surface 33%
• Low Dark Current 33%
• PureB 33%
• Cross-sectional Transmission Electron Microscopy 33%

Engineering

• Nanometre 100%
• Side Wall 50%
• Resistance-Voltage 50%
• Metallizations 50%
• Si Wafer 50%
• Ge Crystal 50%
• Photodiode 50%
• Energy Engineering 50%
• Transmissions 50%
• Interconnects 50%
• Si Surface 50%
• High Resolution 50%
• Breakdown Voltage 50%

Material Science

• Silicon 100%
• Aluminum 100%
• Germanium 100%
• Oxide Compound 33%
• Gallium 22%
• Boron 11%
• Anode 11%
• Contact Resistance 11%
• Electrical Property 11%
• Transmission Electron Microscopy 11%