Abstract
While the semiconductor industry struggles with the inherent trade-offs of solid-state devices, serialization of power switches, like the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) or the Insulated Gate Bipolar Transistor (IGBT), has been proven to be an advantageous alternative to acquire a high-efficient, high-voltage, fast-switching device. More than twenty years of research, on the serialization of solid-state devices, have resulted into several different stacking concepts. Among the prevailing ones, the gate balancing core technique, which has demonstrated very good performance in strings of high-power IGBT modules. In this paper, the limitations of the gate balancing core technique, when employed to serialize low or medium power off-the-shelf switches, are identified via experimental results. A new design specification for the interwinding capacitance of the employed transformer is derived to address those limitations, leading to a revised version of the technique. The effectiveness and the applicability of the revised gate balancing core technique are verified, via experiments conducted on a string of two off-the-shelf, non-matched MOSFETs, installed in an inductively loaded step-down converter.
Original language | English |
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Title of host publication | Proceedings of the 15th European Conference on Power Electronics and Applications, EPE 2013 |
Number of pages | 11 |
Publisher | IEEE Press |
Publication date | 2013 |
Pages | 1-11 |
ISBN (Print) | 9781479901159 |
ISBN (Electronic) | 9781479901142, 978-147990116-6 |
DOIs | |
Publication status | Published - 2013 |
Event | European Conference on Power Electronics and Applications, EPE 2013 - Lille, France Duration: 3 Sept 2013 → 5 Sept 2013 http://www.epe2013.com/ |
Conference
Conference | European Conference on Power Electronics and Applications, EPE 2013 |
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Country/Territory | France |
City | Lille |
Period | 03/09/2013 → 05/09/2013 |
Internet address |
Keywords
- Discrete power device
- High power discrete device
- IGBT
- MOSFET