Engineering
Junction Temperature
100%
Optical Fiber
100%
Power Electronics
75%
Photovoltaics
33%
Metal-Oxide-Semiconductor Field-Effect Transistor
33%
Measuring Temperature
33%
Design for Reliability
33%
Defects
33%
Moisture Transport
33%
Humid Environment
33%
Diffusion Coefficient
33%
Moisture Diffusion
33%
Numerical Model
33%
Moisture Absorption
33%
Relative Humidity
33%
Field Operation
22%
Electrical Condition
16%
Test Result
16%
Platform Design
16%
Discrete Component
16%
Experimental Result
16%
Temperature Distribution
15%
Level Converter
11%
Renewable Conversion
11%
Transmissions
11%
Enabling Technology
11%
Power Engineering
11%
Power Electronic Converter
11%
Component Level
11%
Energy Conservation
11%
Reliability Analysis
11%
Testing Time
11%
Engineering Tool
11%
Failure Mechanism
11%
Reliability Engineering
11%
Energy Efficiency
11%
Energy Production
11%
Product Development Process
11%
Energy Systems
11%
Electrical Energy
11%
Test Method
8%
Loading Condition
8%
Degradation Process
8%
Thermal Stress
8%
Wear Process
8%
Power Device
6%
Installation Cost
6%
Operating Voltage
6%
Dc Voltage
6%
Switching Speed
6%
Keyphrases
Photovoltaic Inverter
33%
Power Components
33%
Temperature Measurement
33%
Mask Defects
33%
Solder Mask
33%
Optical Fiber
33%
Power Cycling
33%
Design Reliability
33%
Temperature Swing
33%
SiC MOSFET
33%
Gap Result
33%
Gate Resistance
33%
Junction Temperature
25%
Power Cycling Test
16%
Discrete Module
11%
Moisture Desorption
11%
PCBA
11%
Reaction Simulation
11%
COMSOL Software
11%
Reliability Growth
11%
Mask Layer
11%
Sample Testing
11%
Application-oriented Testing
11%
Semiconductor Components
8%
Solar Photovoltaic Industry
8%
Stress Loading
8%
Reliability Improvement
8%
Power Electronics
8%
Power Semiconductor
8%
Electronic Field
8%
Power Plant
8%
Mission Profile
8%
Power Module
8%
Proposed Design
8%
Thermal Loading
8%
Evaluation Results
8%
Health Status
8%
Thermal Stress
8%
Power Device
8%
DC Power
8%
Switching Speed
8%
Denmark
8%
Device Testing
8%
Result-oriented
8%
Photovoltaic System
8%
Silicon Carbide (SiC) MOSFET
8%
Switching Power Loss
8%
Reliability Performance
8%
Load Stress
8%
Degradation Process
8%