Abstract
This paper proposes an improved analytical turn-on power loss model for 650-V GaN eHEMTs. The static characteristics, i.e., the parasitic capacitances and transconductance, are firstly modeled. Then the turn-on process is divided into multiple stages and analyzed in detail; as results, the time-domain solutions to the drain-source voltage and drain current are obtained. Finally, double-pulse tests are conducted to verify the proposed power loss model. This analytical model enables an accurate and fast switching behavior characterization and power loss prediction.
Originalsprog | Engelsk |
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Titel | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) |
Antal sider | 6 |
Forlag | IEEE Press |
Publikationsdato | mar. 2018 |
Sider | 913-918 |
ISBN (Trykt) | 978-1-5386-1181-4 |
ISBN (Elektronisk) | 978-1-5386-1180-7 |
DOI | |
Status | Udgivet - mar. 2018 |
Begivenhed | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) - San Antonio, USA Varighed: 4 mar. 2018 → 8 mar. 2018 |
Konference
Konference | 2018 IEEE Applied Power Electronics Conference and Exposition (APEC) |
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Land/Område | USA |
By | San Antonio |
Periode | 04/03/2018 → 08/03/2018 |