Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

Hongbo Zhao; Dipen Narendra Dalal; Jannick Kjær Jørgensen; Xiongfei Wang; Michael Møller Bech; Asger Bjørn Jørgensen; Szymon Michal Beczkowski; Christian Uhrenfeldt; Stig Munk-Nielsen

doi:10.1109/APEC39645.2020.9124147

Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

Hongbo Zhao, Dipen Narendra Dalal, Jannick Kjær Jørgensen, Xiongfei Wang, Michael Møller Bech, Asger Bjørn Jørgensen, Szymon Michal Beczkowski, Christian Uhrenfeldt, Stig Munk-Nielsen

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

4 Citationer (Scopus)

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Abstract

This paper analyzes the phenomenon of ground current in the filter inductors (with a grounded core/frame) of medium-voltage (MV) SiC-MOSFET-based. The inductor ground current is generated during the switching transients, due to the capacitive coupling between the winding and the core/frame. A general three-terminal equivalent circuit is proposed for representing the capacitive couplings of the filter inductors, which allows the extraction of equivalent admittances between the terminals by using the system identification tool, and thus the ground current can be accurately simulated in the frequency range of concern (up to 100 MHz in this paper). The simulated ground current based on the behavioral model match closely with the experimental results measured in a medium voltage SiC MOSFET based double-pulse test.

Originalsprog	Engelsk
Titel	Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Antal sider	7
Forlag	IEEE Press
Publikationsdato	jun. 2020
Sider	1972-1978
Artikelnummer	9124147
ISBN (Elektronisk)	9781728148298
DOI	https://doi.org/10.1109/APEC39645.2020.9124147
Status	Udgivet - jun. 2020
Begivenhed	2020 IEEE Applied Power Electronics Conference and Exposition (APEC) - New Orleans, LA, USA Varighed: 15 mar. 2020 → 19 mar. 2020

Konference

Konference	2020 IEEE Applied Power Electronics Conference and Exposition (APEC)
Land/Område	USA
By	New Orleans, LA
Periode	15/03/2020 → 19/03/2020

Navn	IEEE Applied Power Electronics Conference and Exposition (APEC)
ISSN	1048-2334

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10.1109/APEC39645.2020.9124147

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4 Citationer
2 Ph.d.-afhandling

Demonstration of 10 kV Silicon Carbide Power Semiconductor Technology in Medium Voltage Power Conversion
Dalal, D. N., 2021, Aalborg Universitetsforlag. 208 s.
Publikation: Ph.d.-afhandling

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Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors
Zhao, H., 2021, Aalborg Universitetsforlag. 103 s.
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Zhao, H., Dalal, D. N., Jørgensen, J. K., Wang, X., Bech, M. M., Jørgensen, A. B., Beczkowski, S. M., Uhrenfeldt, C., & Munk-Nielsen, S. (2020). Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters. I Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC) (s. 1972-1978). Artikel 9124147 IEEE Press. https://doi.org/10.1109/APEC39645.2020.9124147

@inproceedings{ae5b4f2bffaf4c1ba7c2d796e6825d87,

title = "Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters",

abstract = "This paper analyzes the phenomenon of ground current in the filter inductors (with a grounded core/frame) of medium-voltage (MV) SiC-MOSFET-based. The inductor ground current is generated during the switching transients, due to the capacitive coupling between the winding and the core/frame. A general three-terminal equivalent circuit is proposed for representing the capacitive couplings of the filter inductors, which allows the extraction of equivalent admittances between the terminals by using the system identification tool, and thus the ground current can be accurately simulated in the frequency range of concern (up to 100 MHz in this paper). The simulated ground current based on the behavioral model match closely with the experimental results measured in a medium voltage SiC MOSFET based double-pulse test.",

keywords = "Ground current, filter inductors, general three-terminal equivalent circuit, behavioral modeling, Double-pulse test",

author = "Hongbo Zhao and Dalal, {Dipen Narendra} and J{\o}rgensen, {Jannick Kj{\ae}r} and Xiongfei Wang and Bech, {Michael M{\o}ller} and J{\o}rgensen, {Asger Bj{\o}rn} and Beczkowski, {Szymon Michal} and Christian Uhrenfeldt and Stig Munk-Nielsen",

year = "2020",

month = jun,

doi = "10.1109/APEC39645.2020.9124147",

language = "English",

series = "IEEE Applied Power Electronics Conference and Exposition (APEC)",

publisher = "IEEE Press",

pages = "1972--1978",

booktitle = "Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)",

note = "2020 IEEE Applied Power Electronics Conference and Exposition (APEC) ; Conference date: 15-03-2020 Through 19-03-2020",

}

Zhao, H, Dalal, DN, Jørgensen, JK , Wang, X , Bech, MM , Jørgensen, AB , Beczkowski, SM, Uhrenfeldt, C & Munk-Nielsen, S 2020, Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters. i Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)., 9124147, IEEE Press, IEEE Applied Power Electronics Conference and Exposition (APEC), s. 1972-1978, 2020 IEEE Applied Power Electronics Conference and Exposition (APEC), New Orleans, LA, USA, 15/03/2020. https://doi.org/10.1109/APEC39645.2020.9124147

Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters. / Zhao, Hongbo; Dalal, Dipen Narendra; Jørgensen, Jannick Kjær et al.
Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press, 2020. s. 1972-1978 9124147 (IEEE Applied Power Electronics Conference and Exposition (APEC)).

Publikation: Bidrag til bog/antologi/rapport/konference proceeding › Konferenceartikel i proceeding › Forskning › peer review

TY - GEN

T1 - Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

AU - Zhao, Hongbo

AU - Dalal, Dipen Narendra

AU - Jørgensen, Jannick Kjær

AU - Wang, Xiongfei

AU - Bech, Michael Møller

AU - Jørgensen, Asger Bjørn

AU - Beczkowski, Szymon Michal

AU - Uhrenfeldt, Christian

AU - Munk-Nielsen, Stig

PY - 2020/6

Y1 - 2020/6

N2 - This paper analyzes the phenomenon of ground current in the filter inductors (with a grounded core/frame) of medium-voltage (MV) SiC-MOSFET-based. The inductor ground current is generated during the switching transients, due to the capacitive coupling between the winding and the core/frame. A general three-terminal equivalent circuit is proposed for representing the capacitive couplings of the filter inductors, which allows the extraction of equivalent admittances between the terminals by using the system identification tool, and thus the ground current can be accurately simulated in the frequency range of concern (up to 100 MHz in this paper). The simulated ground current based on the behavioral model match closely with the experimental results measured in a medium voltage SiC MOSFET based double-pulse test.

AB - This paper analyzes the phenomenon of ground current in the filter inductors (with a grounded core/frame) of medium-voltage (MV) SiC-MOSFET-based. The inductor ground current is generated during the switching transients, due to the capacitive coupling between the winding and the core/frame. A general three-terminal equivalent circuit is proposed for representing the capacitive couplings of the filter inductors, which allows the extraction of equivalent admittances between the terminals by using the system identification tool, and thus the ground current can be accurately simulated in the frequency range of concern (up to 100 MHz in this paper). The simulated ground current based on the behavioral model match closely with the experimental results measured in a medium voltage SiC MOSFET based double-pulse test.

KW - Ground current

KW - filter inductors

KW - general three-terminal equivalent circuit

KW - behavioral modeling

KW - Double-pulse test

UR - http://www.scopus.com/inward/record.url?scp=85087789390&partnerID=8YFLogxK

U2 - 10.1109/APEC39645.2020.9124147

DO - 10.1109/APEC39645.2020.9124147

M3 - Article in proceeding

T3 - IEEE Applied Power Electronics Conference and Exposition (APEC)

SP - 1972

EP - 1978

BT - Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

PB - IEEE Press

T2 - 2020 IEEE Applied Power Electronics Conference and Exposition (APEC)

Y2 - 15 March 2020 through 19 March 2020

ER -

Zhao H, Dalal DN, Jørgensen JK , Wang X , Bech MM , Jørgensen AB et al. Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters. I Proceedings of 2020 IEEE Applied Power Electronics Conference and Exposition (APEC). IEEE Press. 2020. s. 1972-1978. 9124147. (IEEE Applied Power Electronics Conference and Exposition (APEC)). doi: 10.1109/APEC39645.2020.9124147

Behavioral Modeling of Ground Current in Filter Inductors of Medium-Voltage SiC-MOSFET-Based Converters

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Demonstration of 10 kV Silicon Carbide Power Semiconductor Technology in Medium Voltage Power Conversion

Modeling and Reducing the Parasitic Capacitance in Medium-Voltage Inductors

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