A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode

G. Susinni; S. A. Rizzo; F. Iannuzzo; A. Raciti

doi:10.1016/j.microrel.2020.113845

A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode

G. Susinni^*, S. A. Rizzo, F. Iannuzzo, A. Raciti

^*Corresponding author for this work

Research output: Contribution to journal › Journal article › Research › peer-review

9 Citations (Scopus)

Abstract

A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.

Original language	English
Article number	113845
Journal	Microelectronics Reliability
Volume	114
ISSN	0026-2714
DOIs	https://doi.org/10.1016/j.microrel.2020.113845
Publication status	Published - Nov 2020

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© 2020 Elsevier Ltd

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Copyright 2020 Elsevier B.V., All rights reserved.

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title = "A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode",

abstract = "A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.",

author = "G. Susinni and Rizzo, {S. A.} and F. Iannuzzo and A. Raciti",

year = "2020",

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AU - Susinni, G.

AU - Rizzo, S. A.

AU - Iannuzzo, F.

AU - Raciti, A.

PY - 2020/11

Y1 - 2020/11

N2 - A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.

AB - A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effectiveness of the circuit has been confirmed by the analysis of a commercial SiC power module. The proposed temperature sensing strategy is fast, inexpensive, accurate, and non-invasive.

UR - http://www.scopus.com/inward/record.url?scp=85096015907&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2020.113845

DO - 10.1016/j.microrel.2020.113845

M3 - Journal article

AN - SCOPUS:85096015907

SN - 0026-2714

VL - 114

JO - Microelectronics Reliability

JF - Microelectronics Reliability

M1 - 113845

ER -

A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode

Abstract

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