Abstract
This work deals with the implementation and development of a PSpice based modeling platform for 10 kV/100 A SiC MOSFET power modules. The studied SiC MOSFET power module is composed of a total of 9 dies connected in parallel with 10.0 kV blocking voltage capability. The proposed model was implemented based on the already established McNutt Hefner model originally developed for discrete single-die based SiC-MOSFETs. The proposed model has been verified both with static and dynamic experimental data and at different temperatures. Moreover, the energy loss assessment has been performed for a variety of operating parameters (e.g., stray inductance, gate resistance), different load current and supply voltages. The model was also verified with parallel connection of several power modules in order to predict the current unbalance as a result of various parasitic elements in the test circuit. The developed model has been further extended to study the electro-thermal behaviour under short circuit with accurate predictability, and validated with the experimental data. Finally, the operational robustness of the model was judged by simulating an arbitrary Buck, and Boost converter where the converter efficiency was studied with varying circuit parameters.
| Original language | English |
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| Title of host publication | Proceedings of 2017 IEEE Energy Conversion Congress and Exposition (ECCE) |
| Publisher | IEEE Press |
| Publication date | Oct 2017 |
| ISBN (Electronic) | 978-1-5090-2998-3 |
| DOIs | |
| Publication status | Published - Oct 2017 |
| Event | 2017 IEEE Energy Conversion Congress and Exposition (ECCE) - Cincinnati, Ohio, United States Duration: 1 Oct 2017 → 5 Oct 2017 |
Conference
| Conference | 2017 IEEE Energy Conversion Congress and Exposition (ECCE) |
|---|---|
| Country/Territory | United States |
| City | Cincinnati, Ohio |
| Period | 01/10/2017 → 05/10/2017 |
Keywords
- SiC-MOSFETs
- Pspice Simulation
- Device modeling
- Parameter extraction
- Wide bandgap devices