Abstract
In this paper, the reliability performance of 1.2-kV silicon carbide (SiC) power mosfet modules is investigated through the combination of both accelerated power-cycling tests and short-circuit tests. The short-circuit robustness of SiC mosfet is investigated after stressing the dies under power-cycling tests. In this way, the implications of different levels of degradation on the short-circuit capability can be better understood. During the power-cycling tests, some electrical parameters, either related to the package or the die, may experience variations as a consequence of the device ageing (e.g., increase in bond wire resistance and increase in gate leakage current). The effect of these parameter variations on the short-circuit withstanding capability of SiC mosfets is investigated for the first time in this paper. The proposed method helps to understand which degradation effects under normal operation have a major implication on the short-circuit robustness, which gives a more realistic information about the root cause of the failures observed in the field.
Original language | English |
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Article number | 8634945 |
Journal | IEEE Transactions on Power Electronics |
Volume | 34 |
Issue number | 11 |
Pages (from-to) | 11182 - 11190 |
Number of pages | 9 |
ISSN | 0885-8993 |
DOIs | |
Publication status | Published - Nov 2019 |
Keywords
- Accelerated power cycling tests
- Aging indicators
- Gate-oxide
- Kelvin terminal
- Power semiconductor device
- Reliability
- Silicon carbide (SiC) mosfet
- Short circuit
- Thermal cycling
- aging indicators
- reliability
- gate-oxide
- silicon carbide (SiC) mosfet
- thermal cycling
- short circuit
- power semiconductor device