Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs

He Du; Nick Baker; Francesco Iannuzzo

doi:10.1109/ISPSD46842.2020.9170133

Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

2 Citations (Scopus)

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Abstract

The purpose of this paper is to investigate the impact of repetitive short circuit events on the remaining useful lifetime of 1.0-kV/22-A SiC MOSFETs. Mixed accelerated power cycling tests, together with the different number of short-circuit repetitions, have been performed to provide a concrete estimation of short-circuit impact. The experimental results of short circuit waveforms show an increasing gate leakage current with the increasing number of repetitions. Due to the higher on-state voltage, induced by short circuit degradation, the devices withstand higher temperature swing during power cycling test compared to their initial condition, which accelerates the aging process and is related to the number of repetitive short circuits.

Original language	English
Title of host publication	2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Number of pages	4
Publisher	IEEE
Publication date	Aug 2020
Pages	202-205
Article number	9170133
ISBN (Print)	978-1-7281-4837-3
ISBN (Electronic)	978-1-7281-4836-6
DOIs	https://doi.org/10.1109/ISPSD46842.2020.9170133
Publication status	Published - Aug 2020
Event	32nd International Symposium on Power Semiconductor Devices and ICs - Vienna, Austria Duration: 13 Sept 2020 → 18 Sept 2020

Conference

Conference	32nd International Symposium on Power Semiconductor Devices and ICs
Country/Territory	Austria
City	Vienna
Period	13/09/2020 → 18/09/2020

Series	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN	1063-6854

Keywords

Silicon Carbide (SiC) power MOSFET
power cycling
reliability
short-circuit

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10.1109/ISPSD46842.2020.9170133

HDU_ISPSD_2020Accepted author manuscript, 7.47 MB

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@inproceedings{88ea6ed0f091424fb033553e5d7ad07f,

title = "Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs",

abstract = "The purpose of this paper is to investigate the impact of repetitive short circuit events on the remaining useful lifetime of 1.0-kV/22-A SiC MOSFETs. Mixed accelerated power cycling tests, together with the different number of short-circuit repetitions, have been performed to provide a concrete estimation of short-circuit impact. The experimental results of short circuit waveforms show an increasing gate leakage current with the increasing number of repetitions. Due to the higher on-state voltage, induced by short circuit degradation, the devices withstand higher temperature swing during power cycling test compared to their initial condition, which accelerates the aging process and is related to the number of repetitive short circuits.",

keywords = "Silicon Carbide (SiC) power MOSFET, power cycling, reliability, short-circuit",

author = "He Du and Nick Baker and Francesco Iannuzzo",

year = "2020",

month = aug,

doi = "10.1109/ISPSD46842.2020.9170133",

language = "English",

isbn = "978-1-7281-4837-3",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

pages = "202--205",

booktitle = "2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)",

publisher = "IEEE",

address = "United States",

note = "32nd International Symposium on Power Semiconductor Devices and ICs, ISPSD ; Conference date: 13-09-2020 Through 18-09-2020",

}

Du, H, Baker, N & Iannuzzo, F 2020, Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs. in 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)., 9170133, IEEE, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, pp. 202-205, 32nd International Symposium on Power Semiconductor Devices and ICs, Vienna, Austria, 13/09/2020. https://doi.org/10.1109/ISPSD46842.2020.9170133

Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs. / Du, He; Baker, Nick; Iannuzzo, Francesco.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2020. p. 202-205 9170133 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs

AU - Du, He

AU - Baker, Nick

AU - Iannuzzo, Francesco

PY - 2020/8

Y1 - 2020/8

N2 - The purpose of this paper is to investigate the impact of repetitive short circuit events on the remaining useful lifetime of 1.0-kV/22-A SiC MOSFETs. Mixed accelerated power cycling tests, together with the different number of short-circuit repetitions, have been performed to provide a concrete estimation of short-circuit impact. The experimental results of short circuit waveforms show an increasing gate leakage current with the increasing number of repetitions. Due to the higher on-state voltage, induced by short circuit degradation, the devices withstand higher temperature swing during power cycling test compared to their initial condition, which accelerates the aging process and is related to the number of repetitive short circuits.

AB - The purpose of this paper is to investigate the impact of repetitive short circuit events on the remaining useful lifetime of 1.0-kV/22-A SiC MOSFETs. Mixed accelerated power cycling tests, together with the different number of short-circuit repetitions, have been performed to provide a concrete estimation of short-circuit impact. The experimental results of short circuit waveforms show an increasing gate leakage current with the increasing number of repetitions. Due to the higher on-state voltage, induced by short circuit degradation, the devices withstand higher temperature swing during power cycling test compared to their initial condition, which accelerates the aging process and is related to the number of repetitive short circuits.

KW - Silicon Carbide (SiC) power MOSFET

KW - power cycling

KW - reliability

KW - short-circuit

UR - http://www.scopus.com/inward/record.url?scp=85090593508&partnerID=8YFLogxK

U2 - 10.1109/ISPSD46842.2020.9170133

DO - 10.1109/ISPSD46842.2020.9170133

M3 - Article in proceeding

SN - 978-1-7281-4837-3

T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs

SP - 202

EP - 205

BT - 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

PB - IEEE

T2 - 32nd International Symposium on Power Semiconductor Devices and ICs

Y2 - 13 September 2020 through 18 September 2020

ER -

Du H, Baker N, Iannuzzo F. Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs. In 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE. 2020. p. 202-205. 9170133. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD46842.2020.9170133

Implications of Short-Circuit Degradation on the Aging Process in Accelerated Cycling Tests of SiC MOSFETs

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Impact of Short-Circuit Events on the Remaining Useful Life of SiC MOSFETs and Mitigation Strategy

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