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Abstract
This paper proposes a novel mission-profile-based reliability analysis approach for stress on bond wires in Silicon Carbide (SiC) MOSFET power modules using statistics and thermo-mechanical FEM analysis. In the proposed approach, both the operational and environmental thermal stresses are taken into account. The approach uses a two-dimension statistical analysis of the operating conditions in a real one-year mission profile sampled at time frames 5 minutes long. For every statistical bin corresponding to a given operating condition, the junction temperature evolution is estimated by a thermal network and the mechanical stress on bond wires is consequently extracted by finite-element simulations. In the final step, the considered mission profile is translated in a stress sequence to be used for Rainflow counting calculation and lifetime estimation.
Original language | English |
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Journal | Microelectronics Reliability |
Volume | 64 |
Pages (from-to) | 419–424 |
Number of pages | 6 |
ISSN | 0026-2714 |
DOIs | |
Publication status | Published - Sept 2016 |
Keywords
- Bond-wire fatigue
- Electro-thermal model
- Thermo-mechanical model
- SiC Power Module
- Mission profile
- Reliability
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Dive into the research topics of 'Mission-profile-based stress analysis of bond-wires in SiC power modules'. Together they form a unique fingerprint.Projects
- 1 Finished
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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research