Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Mohsen Akbari; Amir Sajjad Bahman; Paula Diaz Reigosa; Lorenzo Ceccarelli; Francesco Iannuzzo; Mohammad Tavakoli Bina

doi:10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

Mohsen Akbari, Amir Sajjad Bahman, Paula Diaz Reigosa, Lorenzo Ceccarelli, Francesco Iannuzzo, Mohammad Tavakoli Bina

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

8 Citations (Scopus)

304 Downloads (Pure)

Abstract

Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

Original language	English
Title of host publication	Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
Number of pages	6
Publisher	IEEE Press
Publication date	Sept 2018
Pages	1-6
ISBN (Print)	978-1-5386-6760-6
ISBN (Electronic)	978-1-5386-6759-0
DOIs	https://doi.org/10.1109/THERMINIC.2018.8593307
Publication status	Published - Sept 2018
Event	24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) - Stockholm, Sweden Duration: 26 Sept 2018 → 28 Sept 2018

Conference

Conference	24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)
Country/Territory	Sweden
City	Stockholm
Period	26/09/2018 → 28/09/2018

Series	International Workshop on Thermal Investigations of ICs and Systems
ISSN	2474-1515

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10.1109/THERMINIC.2018.8593307

AcceptedAccepted author manuscript, 1.27 MB

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Center Of Reliable Power Electronics (CORPE)
Blaabjerg, F., Munk-Nielsen, S., Pedersen, K. & Popok, V.
01/04/2011 → 31/12/2016
Project: Research

Cite this

Akbari, M., Bahman, A. S., Reigosa, P. D., Ceccarelli, L., Iannuzzo, F., & Tavakoli Bina, M. (2018). Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. In Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC) (pp. 1-6). IEEE Press. https://doi.org/10.1109/THERMINIC.2018.8593307

Akbari, Mohsen ; Bahman, Amir Sajjad ; Reigosa, Paula Diaz et al. / Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, 2018. pp. 1-6 (International Workshop on Thermal Investigations of ICs and Systems).

@inproceedings{2d6546b2e55747c8b4e08ac3e0a97aec,

title = "Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs",

abstract = "Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.",

author = "Mohsen Akbari and Bahman, {Amir Sajjad} and Reigosa, {Paula Diaz} and Lorenzo Ceccarelli and Francesco Iannuzzo and {Tavakoli Bina}, Mohammad",

year = "2018",

month = sep,

doi = "10.1109/THERMINIC.2018.8593307",

language = "English",

isbn = "978-1-5386-6760-6",

series = "International Workshop on Thermal Investigations of ICs and Systems",

pages = "1--6",

booktitle = "Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)",

publisher = "IEEE Press",

note = "24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), THERMINIC ; Conference date: 26-09-2018 Through 28-09-2018",

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Akbari, M, Bahman, AS, Reigosa, PD, Ceccarelli, L, Iannuzzo, F & Tavakoli Bina, M 2018, Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. in Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, International Workshop on Thermal Investigations of ICs and Systems, pp. 1-6, 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), Stockholm, Sweden, 26/09/2018. https://doi.org/10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. / Akbari, Mohsen; Bahman, Amir Sajjad; Reigosa, Paula Diaz et al.
Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press, 2018. p. 1-6 (International Workshop on Thermal Investigations of ICs and Systems).

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

AU - Akbari, Mohsen

AU - Bahman, Amir Sajjad

AU - Reigosa, Paula Diaz

AU - Ceccarelli, Lorenzo

AU - Iannuzzo, Francesco

AU - Tavakoli Bina, Mohammad

PY - 2018/9

Y1 - 2018/9

N2 - Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

AB - Being the power loss and temperature distribution in power-electronics semiconductor dies influenced by one another, this paper demonstrates that neglecting such an effect can result in significant errors in electro-thermal simulations and mistaken calculation of junction temperatures. Two case studies on different semiconductor technologies, namely Silicon Insulated-Gate Bipolar Transistors (IGBTs) and Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are presented to corroborate the paper findings. Resultant temperature distributions are obtained by a proposed flowchart, which accepts the corresponding power dissipation input from MATLAB environment and employs a finite element based analysis implemented in COMSOL Multiphysics environment.

U2 - 10.1109/THERMINIC.2018.8593307

DO - 10.1109/THERMINIC.2018.8593307

M3 - Article in proceeding

SN - 978-1-5386-6760-6

T3 - International Workshop on Thermal Investigations of ICs and Systems

SP - 1

EP - 6

BT - Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

PB - IEEE Press

T2 - 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC)

Y2 - 26 September 2018 through 28 September 2018

ER -

Akbari M, Bahman AS, Reigosa PD, Ceccarelli L, Iannuzzo F, Tavakoli Bina M. Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs. In Proceedings of the 2018 24rd International Workshop on Thermal Investigations of ICs and Systems (THERMINIC). IEEE Press. 2018. p. 1-6. (International Workshop on Thermal Investigations of ICs and Systems). doi: 10.1109/THERMINIC.2018.8593307

Non-uniform Temperature Distribution Implications on Thermal Analysis Accuracy of Si IGBTs and SiC MOSFETs

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