TY - JOUR
T1 - Physical CAD model for high-voltage IGBTs based on lumped-charge approach
AU - Iannuzzo, Francesco
AU - Busatto, Giovanni
PY - 2004/8/19
Y1 - 2004/8/19
N2 - A new insulated gate bipolar transistor (IGBT) model developed on a physical basis is presented. The Lumped-Charge method has been revised in order to point out a more general methodology for implementing the model into a circuit form. As an example, a version of the model for the popular PSPICE simulator is presented. The N-channel IGBT structure is described by means of an evolution of the PSPICE level-1 metal oxide semiconductor field effect transistor model. An accurate mobility model has been included to precisely predict the voltage drop in the ON state. Simulation results agree well with the experiments both in static and in switching operations. The comparison between the proposed and the native IGBT PSPICE model shows the better behavior of the former. The reasons for this result have been verified by means of two-dimensional MEDICI simulations. Moreover, the proposed model is able to predict the device behavior also in critical operations like its latchup during a turn-off under short-circuit conditions.
AB - A new insulated gate bipolar transistor (IGBT) model developed on a physical basis is presented. The Lumped-Charge method has been revised in order to point out a more general methodology for implementing the model into a circuit form. As an example, a version of the model for the popular PSPICE simulator is presented. The N-channel IGBT structure is described by means of an evolution of the PSPICE level-1 metal oxide semiconductor field effect transistor model. An accurate mobility model has been included to precisely predict the voltage drop in the ON state. Simulation results agree well with the experiments both in static and in switching operations. The comparison between the proposed and the native IGBT PSPICE model shows the better behavior of the former. The reasons for this result have been verified by means of two-dimensional MEDICI simulations. Moreover, the proposed model is able to predict the device behavior also in critical operations like its latchup during a turn-off under short-circuit conditions.
UR - http://www.scopus.com/inward/record.url?scp=3843149412&partnerID=8YFLogxK
U2 - 10.1109/TPEL.2004.830085
DO - 10.1109/TPEL.2004.830085
M3 - Journal article
AN - SCOPUS:3843149412
SN - 0885-8993
VL - 19
SP - 885
EP - 893
JO - IEEE Transactions on Power Electronics
JF - IEEE Transactions on Power Electronics
IS - 4
ER -