Abstract
In this paper, the power electronics topology and semiconductor selection for low voltage (115 $\text{V}_{\text{RMS}}$ phase voltage) and medium power (90 kW) DC/AC applications are presented. Since these special power electronic applications require a low phase voltage, the phase current is consequently higher. The higher current is shown to limit the maximum achievable efficiency compared to an industry standard 230 V converter, even though lower voltage rated semiconductors can be used for the 115 V converter. To explore a suitable topology for this special DC/AC converter application, a 2-level Si IGBT and a 2-level SiC MOSFET converter are compared to industry standard 3-level Si topologies using market available semiconductors. The comparison is realised using semiconductor loss models, and a comparatively LC filter loss model. The applied IGBT loss model is verified with a double pulse test (DPT) setup and finally, besides highlighting the suitable topology using a figure of merit and suitable semiconductor type, the advantage of utilizing an interleaving configuration is discussed for IGBT-based converters.
Original language | English |
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Title of host publication | Proceedings of 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
Number of pages | 10 |
Place of Publication | Italy |
Publisher | IEEE Press |
Publication date | Sept 2019 |
Article number | 8915421 |
ISBN (Print) | 978-1-7281-2361-5 |
ISBN (Electronic) | 978-9-0758-1531-3 |
DOIs | |
Publication status | Published - Sept 2019 |
Event | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) - Genova, Italy Duration: 3 Sept 2019 → 5 Sept 2019 |
Conference
Conference | 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe) |
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Country/Territory | Italy |
City | Genova |
Period | 03/09/2019 → 05/09/2019 |
Keywords
- Voltage Source Inverters
- Efficiency
- Silicon carbide
- IGBT
- Device modeling