Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

Rui Wu; Paula Diaz Reigosa; Francesco Iannuzzo; Liudmila Smirnova; Huai Wang; Frede Blaabjerg

doi:10.1109/JESTPE.2015.2414448

Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

Rui Wu^*, Paula Diaz Reigosa, Francesco Iannuzzo, Liudmila Smirnova, Huai Wang, Frede Blaabjerg

^*Corresponding author for this work

AAU Energy

Research output: Contribution to journal › Journal article › Research › peer-review

21 Citations (Scopus)

Abstract

This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.

Original language	English
Article number	7064726
Journal	I E E E Journal of Emerging and Selected Topics in Power Electronics
Volume	3
Issue number	3
Pages (from-to)	756-765
Number of pages	10
ISSN	2168-6777
DOIs	https://doi.org/10.1109/JESTPE.2015.2414448
Publication status	Published - 1 Sept 2015

Keywords

Insulated-gate bipolar transistor (IGBT)
Nndestructive testing
Oscillations
Power modules
Reliability
Short circuit

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10.1109/JESTPE.2015.2414448

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@article{a3745375c0c24857b93127d7eff0c687,

title = "Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System",

abstract = "This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.",

keywords = "Insulated-Gate Bipolar Transistor (IGBT), Non-destructive Testing, Oscillations, Power Modules, Reliability, Short Circuit, Insulated-gate bipolar transistor (IGBT), Nndestructive testing, Oscillations, Power modules, Reliability, Short circuit",

author = "Rui Wu and {Diaz Reigosa}, Paula and Francesco Iannuzzo and Liudmila Smirnova and Huai Wang and Frede Blaabjerg",

year = "2015",

month = sep,

day = "1",

doi = "10.1109/JESTPE.2015.2414448",

language = "English",

volume = "3",

pages = "756--765",

journal = "I E E E Journal of Emerging and Selected Topics in Power Electronics",

issn = "2168-6777",

publisher = "IEEE",

number = "3",

}

Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System. / Wu, Rui; Diaz Reigosa, Paula; Iannuzzo, Francesco et al.
In: I E E E Journal of Emerging and Selected Topics in Power Electronics, Vol. 3, No. 3, 7064726, 01.09.2015, p. 756-765.

Research output: Contribution to journal › Journal article › Research › peer-review

TY - JOUR

T1 - Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

AU - Wu, Rui

AU - Diaz Reigosa, Paula

AU - Iannuzzo, Francesco

AU - Smirnova, Liudmila

AU - Wang, Huai

AU - Blaabjerg, Frede

PY - 2015/9/1

Y1 - 2015/9/1

N2 - This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.

AB - This paper uses a 6-kA/1.1-kV nondestructive testing system for the analysis of the short-circuit behavior of insulated-gate bipolar transistor (IGBT) power modules. A field-programmable gate array enables the definition of control signals to an accuracy of 10 ns. Multiple 1.7-kV/1-kA IGBT power modules displayed severe divergent oscillations, which were subsequently characterized. Experimental tests indicate that nonnegligible circuit stray inductance plays an important role in the divergent oscillations. In addition, the temperature dependence of the transconductance is proposed as an important element in triggering for the oscillations.

KW - Insulated-Gate Bipolar Transistor (IGBT)

KW - Non-destructive Testing

KW - Oscillations

KW - Power Modules

KW - Reliability

KW - Short Circuit

KW - Insulated-gate bipolar transistor (IGBT)

KW - Nndestructive testing

KW - Oscillations

KW - Power modules

KW - Reliability

KW - Short circuit

U2 - 10.1109/JESTPE.2015.2414448

DO - 10.1109/JESTPE.2015.2414448

M3 - Journal article

AN - SCOPUS:84938868100

SN - 2168-6777

VL - 3

SP - 756

EP - 765

JO - I E E E Journal of Emerging and Selected Topics in Power Electronics

JF - I E E E Journal of Emerging and Selected Topics in Power Electronics

IS - 3

M1 - 7064726

ER -

Study on Oscillations during Short Circuit of MW-Scale IGBT Power Modules by Means of a 6-kA/1.1-kV Nondestructive Testing System

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Keywords

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