Engineering
Failure (Mechanical)
78%
Insulated Gate Bipolar Transistor
73%
Networks (Circuits)
73%
Transients
72%
Semiconductor
68%
Aluminum Electrolytic Capacitor
58%
Drain Voltage
58%
Thermal Characterization
58%
Power Converter
44%
Experimental Result
34%
Strain Sensing
29%
Estimation
29%
Power Electronic Converter
29%
Filtration
29%
Metallizations
29%
Parameter Estimation
29%
Equivalent Circuit
29%
Crack Propagation
29%
Zener Diode
29%
Voltage Drop
29%
Fourth Order
19%
Railway
19%
Wind Power
19%
Traction
19%
Dynamic Performance
15%
Gate Voltage
15%
Saturation State
14%
Contact Area
14%
Revealed Failure
14%
Test Condition
14%
Models
14%
Interconnection
14%
Limitations
14%
Junction Temperature
14%
Determines
13%
Analysis Method
9%
Thermal Stress
9%
Illustrates
9%
Stress Model
9%
Negligible Effect
9%
Series Resistance
9%
Circuit Parameter
9%
Level Converter
9%
Battery (Electrochemical Energy Engineering)
9%
Optimization
9%
Photovoltaics
9%
Estimation Error
9%
Design
9%
Power Supply
9%
Test Method
9%
Material Science
Temperature
100%
Capacitor
90%
Metal-Oxide-Semiconductor Field-Effect Transistor
87%
Bipolar Transistor
73%
Characterization
58%
Aluminum
58%
Silicon Carbide
58%
Semiconductor Material
36%
Devices
36%
Electronic Circuit
35%
Film
29%
Thermal Analysis
29%
Insulation
29%
Electrical Resistivity
29%
Diode
29%
Saturation
14%
Capacitance
14%
Thermal Property
13%
Silicon
13%
Contact Resistance
9%
Fracture Mechanics
9%
Semiconductor Device
5%