Estimation Method for Turn-off Collector Voltage of IGBTs Using Emitter-auxiliary Inductor

Haoze Luo; Francesco Iannuzzo; Frede Blaabjerg; Wuhua Li; Xiangning He

doi:10.1109/IPEMC.2016.7512883

Estimation Method for Turn-off Collector Voltage of IGBTs Using Emitter-auxiliary Inductor

Haoze Luo, Francesco Iannuzzo, Frede Blaabjerg, Wuhua Li, Xiangning He

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

2 Citations (Scopus)

Abstract

This paper presents a method for estimating the instantaneous turn-off collector voltage of high-power IGBT modules. Because of the parasitic inductors in circuit, the fast turn-off collector current usually leads to a voltage overshoot on IGBT modules during the turn-off transition. In terms of high-voltage and high-power IGBT module, there exists an emitter-auxiliary inductor between the power emitter and Kelvin emitter. The same variable dic/dt during turn-off transition will also induce a measurable voltage veE across the emitter-auxiliary inductor LeE. As a result, the hazardous turn-off peak collector voltage can be reflected by the induced νeE in the case of fixed commutation loop inductors and emitter auxiliary inductor. Finally, a double pulse test platform is used to validate the effectiveness of estimation method. The estimation curves of turn-off collector voltage are in accordance with the experimental results.

Original language	English
Title of host publication	Proceedings of IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), 2016
Number of pages	6
Publisher	IEEE Press
Publication date	May 2016
Pages	3670 - 3675
ISBN (Electronic)	978-1-5090-1210-7
DOIs	https://doi.org/10.1109/IPEMC.2016.7512883
Publication status	Published - May 2016
Event	2016 8th International Power Electronics and Motion Control Conference - ECCE Asia (IPEMC 2016-ECCE Asia) - Hefei, China Duration: 22 May 2016 → 25 May 2016

Conference

Conference	2016 8th International Power Electronics and Motion Control Conference - ECCE Asia (IPEMC 2016-ECCE Asia)
Country/Territory	China
City	Hefei
Period	22/05/2016 → 25/05/2016

Keywords

Collector voltage estimation
High power IGBTs
Voltage overshoot
Emitter-auxiliary inductor

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10.1109/IPEMC.2016.7512883

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@inproceedings{426c7ef03c3147e980a15279224bf84e,

title = "Estimation Method for Turn-off Collector Voltage of IGBTs Using Emitter-auxiliary Inductor",

abstract = "This paper presents a method for estimating the instantaneous turn-off collector voltage of high-power IGBT modules. Because of the parasitic inductors in circuit, the fast turn-off collector current usually leads to a voltage overshoot on IGBT modules during the turn-off transition. In terms of high-voltage and high-power IGBT module, there exists an emitter-auxiliary inductor between the power emitter and Kelvin emitter. The same variable dic/dt during turn-off transition will also induce a measurable voltage veE across the emitter-auxiliary inductor LeE. As a result, the hazardous turn-off peak collector voltage can be reflected by the induced νeE in the case of fixed commutation loop inductors and emitter auxiliary inductor. Finally, a double pulse test platform is used to validate the effectiveness of estimation method. The estimation curves of turn-off collector voltage are in accordance with the experimental results.",

keywords = "Collector voltage estimation, High power IGBTs, Voltage overshoot, Emitter-auxiliary inductor",

author = "Haoze Luo and Francesco Iannuzzo and Frede Blaabjerg and Wuhua Li and Xiangning He",

year = "2016",

month = may,

doi = "10.1109/IPEMC.2016.7512883",

language = "English",

pages = "3670 -- 3675",

booktitle = "Proceedings of IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), 2016",

publisher = "IEEE Press",

note = "2016 8th International Power Electronics and Motion Control Conference - ECCE Asia (IPEMC 2016-ECCE Asia) , ECCE Asia (IPEMC 2016-ECCE Asia) ; Conference date: 22-05-2016 Through 25-05-2016",

}

Luo, H, Iannuzzo, F , Blaabjerg, F, Li, W & He, X 2016, Estimation Method for Turn-off Collector Voltage of IGBTs Using Emitter-auxiliary Inductor. in Proceedings of IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), 2016. IEEE Press, pp. 3670 - 3675, 2016 8th International Power Electronics and Motion Control Conference - ECCE Asia (IPEMC 2016-ECCE Asia) , Hefei, China, 22/05/2016. https://doi.org/10.1109/IPEMC.2016.7512883

Estimation Method for Turn-off Collector Voltage of IGBTs Using Emitter-auxiliary Inductor. / Luo, Haoze; Iannuzzo, Francesco ; Blaabjerg, Frede et al.
Proceedings of IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), 2016. IEEE Press, 2016. p. 3670 - 3675.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Estimation Method for Turn-off Collector Voltage of IGBTs Using Emitter-auxiliary Inductor

AU - Luo, Haoze

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

AU - Li, Wuhua

AU - He, Xiangning

PY - 2016/5

Y1 - 2016/5

N2 - This paper presents a method for estimating the instantaneous turn-off collector voltage of high-power IGBT modules. Because of the parasitic inductors in circuit, the fast turn-off collector current usually leads to a voltage overshoot on IGBT modules during the turn-off transition. In terms of high-voltage and high-power IGBT module, there exists an emitter-auxiliary inductor between the power emitter and Kelvin emitter. The same variable dic/dt during turn-off transition will also induce a measurable voltage veE across the emitter-auxiliary inductor LeE. As a result, the hazardous turn-off peak collector voltage can be reflected by the induced νeE in the case of fixed commutation loop inductors and emitter auxiliary inductor. Finally, a double pulse test platform is used to validate the effectiveness of estimation method. The estimation curves of turn-off collector voltage are in accordance with the experimental results.

AB - This paper presents a method for estimating the instantaneous turn-off collector voltage of high-power IGBT modules. Because of the parasitic inductors in circuit, the fast turn-off collector current usually leads to a voltage overshoot on IGBT modules during the turn-off transition. In terms of high-voltage and high-power IGBT module, there exists an emitter-auxiliary inductor between the power emitter and Kelvin emitter. The same variable dic/dt during turn-off transition will also induce a measurable voltage veE across the emitter-auxiliary inductor LeE. As a result, the hazardous turn-off peak collector voltage can be reflected by the induced νeE in the case of fixed commutation loop inductors and emitter auxiliary inductor. Finally, a double pulse test platform is used to validate the effectiveness of estimation method. The estimation curves of turn-off collector voltage are in accordance with the experimental results.

KW - Collector voltage estimation

KW - High power IGBTs

KW - Voltage overshoot

KW - Emitter-auxiliary inductor

U2 - 10.1109/IPEMC.2016.7512883

DO - 10.1109/IPEMC.2016.7512883

M3 - Article in proceeding

SP - 3670

EP - 3675

BT - Proceedings of IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), 2016

PB - IEEE Press

T2 - 2016 8th International Power Electronics and Motion Control Conference - ECCE Asia (IPEMC 2016-ECCE Asia)

Y2 - 22 May 2016 through 25 May 2016

ER -

Estimation Method for Turn-off Collector Voltage of IGBTs Using Emitter-auxiliary Inductor

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