Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

Paula Diaz Reigosa; Haoze Luo; Francesco Iannuzzo; Frede Blaabjerg

doi:10.1109/ECCE.2016.7855221

Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

Paula Diaz Reigosa, Haoze Luo, Francesco Iannuzzo, Frede Blaabjerg

AAU Energy

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

16 Citations (Scopus)

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Abstract

This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identiﬁed, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short circuit criteria (i.e., short circuit current-based criterion and gate voltage-based criterion) are proposed in order to ensure their robustness under short-circuit conditions. A Safe Operation Area (SOA) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria.

Original language	English
Title of host publication	Proceedings of 8th IEEE Energy Conversion Congress and Exposition (ECCE), 2016
Number of pages	6
Publisher	IEEE Press
Publication date	Sept 2016
ISBN (Electronic)	978-1-5090-0737-0
DOIs	https://doi.org/10.1109/ECCE.2016.7855221
Publication status	Published - Sept 2016
Event	8th Annual IEEE Energy Conversion Congress & Exposition: ECCE 2016 - Milwaukee, WI, United States Duration: 18 Sept 2016 → 22 Sept 2016 http://www.ieee-ecce.org/

Conference

Conference	8th Annual IEEE Energy Conversion Congress & Exposition
Country/Territory	United States
City	Milwaukee, WI
Period	18/09/2016 → 22/09/2016
Sponsor	IEEE, IEEE Industry Applications Society (IAS), IEEE Power Electronics and Industry Applications Societies (PELS)
Internet address	http://www.ieee-ecce.org/

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2016_Reigosa_ECCEAccepted author manuscript, 1.65 MB

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@inproceedings{d2a81810075b424e9e177e3dcc708e4c,

title = "Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules",

abstract = " This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identiﬁed, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short circuit criteria (i.e., short circuit current-based criterion and gate voltage-based criterion) are proposed in order to ensure their robustness under short-circuit conditions. A Safe Operation Area (SOA) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria.",

author = "Reigosa, {Paula Diaz} and Haoze Luo and Francesco Iannuzzo and Frede Blaabjerg",

year = "2016",

month = sep,

doi = "10.1109/ECCE.2016.7855221",

language = "English",

booktitle = "Proceedings of 8th IEEE Energy Conversion Congress and Exposition (ECCE), 2016",

publisher = "IEEE Press",

note = " 8th Annual IEEE Energy Conversion Congress & Exposition : ECCE 2016, ECCE 2016 ; Conference date: 18-09-2016 Through 22-09-2016",

url = "http://www.ieee-ecce.org/",

}

Reigosa, PD, Luo, H, Iannuzzo, F & Blaabjerg, F 2016, Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules. in Proceedings of 8th IEEE Energy Conversion Congress and Exposition (ECCE), 2016. IEEE Press, 8th Annual IEEE Energy Conversion Congress & Exposition, Milwaukee, WI, United States, 18/09/2016. https://doi.org/10.1109/ECCE.2016.7855221

Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules. / Reigosa, Paula Diaz; Luo, Haoze; Iannuzzo, Francesco et al.
Proceedings of 8th IEEE Energy Conversion Congress and Exposition (ECCE), 2016. IEEE Press, 2016.

Research output: Contribution to book/anthology/report/conference proceeding › Article in proceeding › Research › peer-review

TY - GEN

T1 - Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

AU - Reigosa, Paula Diaz

AU - Luo, Haoze

AU - Iannuzzo, Francesco

AU - Blaabjerg, Frede

PY - 2016/9

Y1 - 2016/9

N2 - This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identiﬁed, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short circuit criteria (i.e., short circuit current-based criterion and gate voltage-based criterion) are proposed in order to ensure their robustness under short-circuit conditions. A Safe Operation Area (SOA) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria.

AB - This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identiﬁed, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short circuit criteria (i.e., short circuit current-based criterion and gate voltage-based criterion) are proposed in order to ensure their robustness under short-circuit conditions. A Safe Operation Area (SOA) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria.

U2 - 10.1109/ECCE.2016.7855221

DO - 10.1109/ECCE.2016.7855221

M3 - Article in proceeding

BT - Proceedings of 8th IEEE Energy Conversion Congress and Exposition (ECCE), 2016

PB - IEEE Press

T2 - 8th Annual IEEE Energy Conversion Congress & Exposition

Y2 - 18 September 2016 through 22 September 2016

ER -

Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

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