@inproceedings{9597fefbba0d4376aed4a96871c24140,
title = "TCAD analysis of short-circuit oscillations in IGBTs",
abstract = "Insulated-Gate Bipolar Transistors (IGBTs) exhibit a gate-voltage oscillation phenomenon during short-circuit, which can result in a gate-oxide breakdown. The oscillations have been investigated through device simulations and experimental investigations of a 3.3-kV IGBT. It has been found that the oscillations are more likely to occur at low DC-link voltages, high gate voltages and low temperatures due to a charge-storage effect at the surface of the IGBT. Based on this insight, the charge-storage effect can be explained with a reduction in carrier velocity due to the electric field shape rotation during short circuit.",
author = "Reigosa, {Paula Diaz} and Francesco Iannuzzo and Munaf Rahimo",
year = "2017",
month = may,
doi = "10.23919/ISPSD.2017.7988933",
language = "English",
series = "International Symposium on Power Semiconductor Devices and ICs (ISPSD)",
publisher = "IEEE Press",
pages = "151--154",
booktitle = "Proceedings of 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD)",
note = "2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) ; Conference date: 28-05-2017 Through 01-06-2017",
}