Abstract
In this paper we compare on-chip RTD sensors and the V SD (T) method for temperature measurement of multi-chip SiC MOSFET modules. We find that the average temperature across multiple chips measured via on-chip RTDs correlates closely with the V SD (T). However, the minimum and maximum chip temperature changes according to the module’s operating conditions. This cannot be detected by the V SD (T) method. In a half-bridge module with 4-chips per switch position, we apply two operating conditions that give the same measured temperature via V SD (T). The maximum chip temperature, measured via the on-chip RTD, deviates over 5°C. This may have implications for power cycling lifetime on multi-chip power modules. We also demonstrate the use of the on-chip RTDs in an IGBT inverter.
Originalsprog | Engelsk |
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Titel | 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe |
Antal sider | 9 |
Forlag | IEEE |
Publikationsdato | 4 sep. 2023 |
Sider | 1 |
Artikelnummer | 10264420 |
ISBN (Elektronisk) | 9789075815412 |
DOI | |
Status | Udgivet - 4 sep. 2023 |
Begivenhed | 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe - Aalborg, Danmark Varighed: 4 sep. 2023 → 8 sep. 2023 |
Konference
Konference | 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe |
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Land/Område | Danmark |
By | Aalborg |
Periode | 04/09/2023 → 08/09/2023 |