Abstract
In this paper we compare on-chip RTD sensors and the V SD (T) method for temperature measurement of multi-chip SiC MOSFET modules. We find that the average temperature across multiple chips measured via on-chip RTDs correlates closely with the V SD (T). However, the minimum and maximum chip temperature changes according to the module’s operating conditions. This cannot be detected by the V SD (T) method. In a half-bridge module with 4-chips per switch position, we apply two operating conditions that give the same measured temperature via V SD (T). The maximum chip temperature, measured via the on-chip RTD, deviates over 5°C. This may have implications for power cycling lifetime on multi-chip power modules. We also demonstrate the use of the on-chip RTDs in an IGBT inverter.
Original language | English |
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Title of host publication | 2023 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe |
Number of pages | 9 |
Publisher | IEEE |
Publication date | 4 Sept 2023 |
Pages | 1 |
Article number | 10264420 |
ISBN (Electronic) | 9789075815412 |
DOIs | |
Publication status | Published - 4 Sept 2023 |
Event | 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe - Aalborg, Denmark Duration: 4 Sept 2023 → 8 Sept 2023 |
Conference
Conference | 25th European Conference on Power Electronics and Applications, EPE 2023 ECCE Europe |
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Country/Territory | Denmark |
City | Aalborg |
Period | 04/09/2023 → 08/09/2023 |
Keywords
- IGBT
- Junction Temperature
- Junction Temperature Estimation
- Junction Temperature Measurement
- SiC MOSFET